N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD4106 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a low side switch in SMPS and general purpose applications. Standard Product AOD4106 is Pb-free (meets ROHS & Sony 259 specifications). AOD4106L is

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AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) =8.1mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：319.32 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Enhancement Mode Field Effect Transistor

AOS

美國萬代

N-Channel 30-V (D-S) MOSFET

文件：959.91 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 53A@ TC=25℃ ·Drain Source Voltage : VDSS= 30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 70mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：331.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

VERY LOW-COST VOICE SYNTHESIZER WITH 4-BIT MICROPROCESSOR

文件：466.28 Kbytes 頁數(shù)：7 Pages

APLUS

巨華