P-Channel Enhancement Mode Field Effect Transistor

P-Channel Enhancement Mode Field Effect Transistor General Description The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protecte

文件：203.85 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK；Package：TO-252；isc P-Channel MOSFET Transistor

DESCRIPTION ? Designed for use in switch mode power supplies and general purpose applications. FEATURES ? Drain Current –ID= -50A@ TC=25℃ ? Drain Source Voltage- : VDSS= -30V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 17mΩ (Max) ? 100 avalanche tested ? Minimum Lot-to-

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ISC

無錫固電

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? Load Switch ? Battery Switch

文件：1.02325 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

文件：258.399 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體

MOSFET：P-Channel

AOS pioneered the fab-lite model in the Trench Power MOSFET field, developing leading-edge products that are exclusively manufactured in state-of-the-art 8-inch fabs. Advanced proprietary silicon and packaging processes are designed in AOS’s U.S. headquarters and are then produced with its very effi

AOS

美國萬代

P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFET ? 100 Rg Tested APPLICATIONS ? Load Switch ? Battery Switch

文件：1.02329 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

P-Channel Enhancement Mode Field Effect Transistor

文件：258.399 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導(dǎo)體