N-Channel Enhancement Mode Field Effect Transistor

General Description The AOD452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard product AOD452 is Pb-free (meets ROHS & Sony 259 specifications). AOD

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AOSMD

萬國半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

AOS

美國萬代

N-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Gen III Power MOSFET ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? DC/DC Conversion - System Power

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VBSEMI

微碧半導(dǎo)體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOI452 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOI452 is Pb-free (meets ROHS & Sony 259 specifications). Fea

文件：479.77 Kbytes 頁數(shù)：5 Pages

AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.7mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

無錫固電