N-Channel SDMOSTM POWER Transistor

General Description The AOD452A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicatio

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AOSMD

萬國半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 55A@ TC=25℃ ·Drain Source Voltage : VDSS= 25V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：318.2 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel SDMOSTM POWER Transistor

General Description The AOD452A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applicatio

文件：289.28 Kbytes 頁數(shù)：7 Pages

AOSMD

萬國半導(dǎo)體

N-Channel SDMOS POWER Transistor

General Description\nThe AOD452A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON)with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications ? VDS(V) = 25V\n? ID= 55A (VGS= 10V)\n? RDS(ON)< 8m?(VGS= 10V)\n? RDS(ON)<14m?(VGS= 4.5V);

AOS

美國萬代