絲印：AO；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Small Flat Package High Voltage Switching Application High Voltage High Transition Frequency

文件：1.47123 Mbytes 頁(yè)數(shù)：3 Pages

DGNJDZ

南晶電子

絲印：AO；Package：DSBGA(YZU)；TPS799 200-mA, Low-Quiescent Current, Ultralow Noise, High-PSRR Low-Dropout Linear Regulator

1 Features ? 200-mA low-dropout regulator with EN ? Multiple output voltage versions available: – Fixed outputs of 1.2 V to 4.5 V – Adjustable outputs from 1.20 V to 6.5 V ? Inrush current protection with EN toggle ? Low IQ: 40 μA ? High PSRR: – 66 dB at 1 kHz – 51 dB at 10 kHz ? Stable

文件：2.31979 Mbytes 頁(yè)數(shù)：49 Pages

TI

德州儀器

絲?。?strong>AO；Package：DSBGA(YZU)；TPS799 200-mA, Low-Quiescent Current, Ultralow Noise, High-PSRR Low-Dropout Linear Regulator

1 Features ? 200-mA low-dropout regulator with EN ? Multiple output voltage versions available: – Fixed outputs of 1.2 V to 4.5 V – Adjustable outputs from 1.20 V to 6.5 V ? Inrush current protection with EN toggle ? Low IQ: 40 μA ? High PSRR: – 66 dB at 1 kHz – 51 dB at 10 kHz ? Stable

文件：2.31979 Mbytes 頁(yè)數(shù)：49 Pages

TI

德州儀器

絲?。?strong>AO；Package：DSBGA(YZU)；TPS799 200-mA, Low-Quiescent Current, Ultralow Noise, High-PSRR Low-Dropout Linear Regulator

1 Features ? 200-mA low-dropout regulator with EN ? Multiple output voltage versions available: – Fixed outputs of 1.2 V to 4.5 V – Adjustable outputs from 1.20 V to 6.5 V ? Inrush current protection with EN toggle ? Low IQ: 40 μA ? High PSRR: – 66 dB at 1 kHz – 51 dB at 10 kHz ? Stable

文件：2.31979 Mbytes 頁(yè)數(shù)：49 Pages

TI

德州儀器

絲印：AO；Package：DSBGA(YZU)；TPS799 200-mA, Low-Quiescent Current, Ultralow Noise, High-PSRR Low-Dropout Linear Regulator

1 Features ? 200-mA low-dropout regulator with EN ? Multiple output voltage versions available: – Fixed outputs of 1.2 V to 4.5 V – Adjustable outputs from 1.20 V to 6.5 V ? Inrush current protection with EN toggle ? Low IQ: 40 μA ? High PSRR: – 66 dB at 1 kHz – 51 dB at 10 kHz ? Stable

文件：2.31979 Mbytes 頁(yè)數(shù)：49 Pages

TI

德州儀器

絲?。?strong>AO；Package：DFN1006-2A；Small Signal Zener Diodes

文件：116.8 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

絲?。?a target="_blank" title="Marking" href="/ao4404/marking.html">AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

General Features VDS = 30V ID =8.5 A RDS(ON)

文件：496.46 Kbytes 頁(yè)數(shù)：8 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/ao4404/marking.html">AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

Description The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =8.5 A RDS(ON)

文件：334.65 Kbytes 頁(yè)數(shù)：8 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/ao4405/marking.html">AO4405；Package：SOP-8；P-Channel MOSFET

General Description The AO4405 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V ID = -6 A RDS(ON)

文件：1.07722 Mbytes 頁(yè)數(shù)：8 Pages

EVVOSEMI

翊歐

絲?。?a target="_blank" title="Marking" href="/ao4405/marking.html">AO4405；Package：SOP-8；P-Channel MOSFET

General Features VDS = -30V ID = -6 A RDS(ON)

文件：486.95 Kbytes 頁(yè)數(shù)：8 Pages

UMW

友臺(tái)半導(dǎo)體