絲印：AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

General Features VDS = 30V ID =8.5 A RDS(ON)

文件：496.46 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體

絲印：AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

Description The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =8.5 A RDS(ON)

文件：334.65 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

絲?。?strong>AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

Description The AO4404 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =8.5 A RDS(ON)

文件：334.65 Kbytes 頁數(shù)：8 Pages

EVVOSEMI

翊歐

絲印：AO4404；Package：SOP-8；N-Channel 20V (D-S) MOSFET

General Features VDS = 30V ID =8.5 A RDS(ON)

文件：496.46 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導體

N-Channel 20V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? Optimized for High-Side Synchronous Rectifier Operation ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Notebook CPU Core - High-Side Switch

文件：1.84875 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to t

文件：587.35 Kbytes 頁數(shù)：6 Pages

AOSMD

萬國半導體

N-Channel MOSFET

■ Features ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON)

文件：1.27519 Mbytes 頁數(shù)：4 Pages

KEXIN

科信電子

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

文件：134.7 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to

文件：134.7 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導體

N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4404B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to th

文件：115.93 Kbytes 頁數(shù)：4 Pages

AOSMD

萬國半導體