| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
AO4409 | 絲印：AO4409；Package：SOP-8；P-Channel MOSFET Features VDS (V) = -30V ID = -15 A Max RDS(ON) 文件：654.15 Kbytes 頁(yè)數(shù)：6 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | |
AO4409 | 絲?。?strong>AO4409；Package：SOP-8；P-Channel MOSFET General Description The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -15 A Max RDS(ON) 文件：365.45 Kbytes 頁(yè)數(shù)：6 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
AO4409 | 絲?。?strong>AO4409；Package：SOP-8；P-Channel MOSFET Features VDS (V) = -30V ID = -15 A Max RDS(ON) 文件：654.15 Kbytes 頁(yè)數(shù)：6 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | |
AO4409 | 絲?。?strong>AO4409；Package：SOP-8；P-Channel MOSFET General Description The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = -30V ID = -15 A Max RDS(ON) 文件：365.45 Kbytes 頁(yè)數(shù)：6 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
AO4409 | 絲?。?a target="_blank" title="Marking" href="/4409/marking.html">4409；Package：SOP-8；P-Channel Enhancement Mode MOSFET FEATURES -30V/-15A Rosion) =6-8MQ(Max.) @ Vg =-10V Roson =13MQ(Max) @ V,, =-4.5V 文件：1.19956 Mbytes 頁(yè)數(shù)：3 Pages | TECHPUBLIC 臺(tái)舟電子 | TECHPUBLIC | |
AO4409 | P-Channel 30-V (D-S) MOSFET FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? 100 Rg Tested ? 100 UIS Tested APPLICATIONS ? Load Switch ? Notebook Adaptor Switch 文件：1.83295 Mbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | |
AO4409 | 30V P-Channel MOSFET General Description The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. * RoHS and Halogen-Free Compliant Product Summary VDS -30V 文件：2.17975 Mbytes 頁(yè)數(shù)：5 Pages | WHXPCB 萬(wàn)和興電子 | WHXPCB | |
AO4409 | P-Channel Enhancement Mode Field Effect Transistor General Description The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS -30V ID(at VGS=-10V) -1 文件：262.9 Kbytes 頁(yè)數(shù)：6 Pages | AOSMD 萬(wàn)國(guó)半導(dǎo)體 | AOSMD | |
AO4409 | P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-10V) ● RDS(ON) 文件：1.38133 Mbytes 頁(yè)數(shù)：4 Pages | KEXIN 科信電子 | KEXIN | |
P-Channel MOSFET ■ Features ● VDS (V) =-30V ● ID =-15 A (VGS =-10V) ● RDS(ON) 文件：1.83286 Mbytes 頁(yè)數(shù)：4 Pages | KEXIN 科信電子 | KEXIN |
詳細(xì)參數(shù)
- 型號(hào)：
AO4409
- 功能描述：
MOSFET P-CH -30V -15A 8-SOIC
- RoHS：
是
- 類別：
分離式半導(dǎo)體產(chǎn)品 >> FET - 單
- 系列：
-
- 標(biāo)準(zhǔn)包裝：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金屬氧化物 FET
- 特點(diǎn)：
邏輯電平門
- 漏極至源極電壓(Vdss)：
200V 電流 - 連續(xù)漏極(Id) @ 25°
- C：
18A 開態(tài)Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫歐 @ 9A，10V Id 時(shí)的
- Vgs(th)（最大）：
4V @ 250µA 閘電荷(Qg) @
- Vgs：
72nC @ 10V 輸入電容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安裝類型：
通孔
- 封裝/外殼：
TO-220-3 整包
- 供應(yīng)商設(shè)備封裝：
TO-220FP
- 包裝：
管件
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AOS美國(guó)萬(wàn)代 |
24+ |
SOP-8 |
666000 |
AOS代理商 優(yōu)勢(shì)供應(yīng)美國(guó)萬(wàn)代AOS全系列 |
詢價(jià) | ||
AOS |
25+ |
SOP8 |
98961 |
原廠代理MOS管,原裝現(xiàn)貨 |
詢價(jià) | ||
AOS/萬(wàn)代 |
25+ |
SOP-8 |
32053 |
AOS/萬(wàn)代全新特價(jià)AO4409即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
詢價(jià) | ||
AOS |
24+ |
SOP-8 |
3000 |
全新原裝的現(xiàn)貨 |
詢價(jià) | ||
AOS |
16+ |
SOP8 |
9236 |
詢價(jià) | |||
AOS |
24+ |
SOP8 |
9800 |
一級(jí)代理/全新原裝現(xiàn)貨/長(zhǎng)期供應(yīng)! |
詢價(jià) | ||
AOS |
23+ |
SOP8 |
69000 |
正規(guī)渠道,只有原裝! |
詢價(jià) | ||
AOS萬(wàn)代 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價(jià) | ||||
UMW 友臺(tái) |
23+ |
SOP-8 |
75000 |
原裝正品，實(shí)單請(qǐng)聯(lián)系 |
詢價(jià) | ||
AOS/萬(wàn)代 |
20+ |
SOP-8 |
120000 |
原裝正品 可含稅交易 |
詢價(jià) |
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