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          首頁(yè) >7N6>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          7N60A4

          600V, SMPS Series N-Channel IGBT

          The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

          文件:168.06 Kbytes 頁(yè)數(shù):11 Pages

          INTERSIL

          7N60AL-X-TA3-T

          7 Amps, 600/650 Volts N-CHANNEL MOSFET

          DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

          文件:297.02 Kbytes 頁(yè)數(shù):7 Pages

          UTC

          友順

          7N60AL-X-TF3-T

          7 Amps, 600/650 Volts N-CHANNEL MOSFET

          DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

          文件:297.02 Kbytes 頁(yè)數(shù):7 Pages

          UTC

          友順

          7N60A-X-TA3-T

          7 Amps, 600/650 Volts N-CHANNEL MOSFET

          DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

          文件:297.02 Kbytes 頁(yè)數(shù):7 Pages

          UTC

          友順

          7N60A-X-TF3-T

          7 Amps, 600/650 Volts N-CHANNEL MOSFET

          DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

          文件:297.02 Kbytes 頁(yè)數(shù):7 Pages

          UTC

          友順

          7N60B

          7A mps,600 Volts N-CHANNEL MOSFET

          FEATURE ● 7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

          文件:193.27 Kbytes 頁(yè)數(shù):2 Pages

          CHONGQING

          平偉實(shí)業(yè)

          7N60C

          HiPerFAST IGBT Lightspeed Series

          Features ? International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB ? High frequency IGBT ? High current handling capability ? HiPerFASTTM HDMOSTM process ? MOS Gate turn-on - drive simplicity Applications ? Uninterruptible power supplies (UPS) ? Switc

          文件:79.19 Kbytes 頁(yè)數(shù):2 Pages

          IXYS

          艾賽斯

          7N60F

          7A mps,600 Volts N-CHANNEL MOSFET

          FEATURE ● 7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

          文件:193.27 Kbytes 頁(yè)數(shù):2 Pages

          CHONGQING

          平偉實(shí)業(yè)

          7N60G-X-T2Q-T

          7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

          ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

          文件:189.43 Kbytes 頁(yè)數(shù):6 Pages

          UTC

          友順

          7N60G-X-TA3-T

          7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

          ■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

          文件:189.43 Kbytes 頁(yè)數(shù):6 Pages

          UTC

          友順

          技術(shù)參數(shù)

          • Vdss(V):

            650

          • Vgss(V):

            30

          • Id(A):

            7.4

          • Package:

            TO-220/TO-220F/TO-22...

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          24+
          8866
          詢價(jià)
          INF
          23+
          TO-262
          5000
          原裝正品,假一罰十
          詢價(jià)
          UTC
          25+
          TO-220
          1525
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          AUK
          23+
          TO-220F
          2500
          絕對(duì)全新原裝!優(yōu)勢(shì)供貨渠道!特價(jià)!請(qǐng)放心訂購(gòu)!
          詢價(jià)
          AAT
          24+
          TO-220/F
          50000
          原裝現(xiàn)貨假一罰十
          詢價(jià)
          12+
          TO-263
          15000
          全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。
          詢價(jià)
          UTC
          17+
          TO-220F
          6200
          詢價(jià)
          UTC
          24+
          TO-263
          5000
          全現(xiàn)原裝公司現(xiàn)貨
          詢價(jià)
          SMD
          23+
          NA
          15659
          振宏微專業(yè)只做正品,假一罰百!
          詢價(jià)
          長(zhǎng)電
          25+23+
          TO-220F
          24433
          絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨
          詢價(jià)
          更多7N6供應(yīng)商 更新時(shí)間2026-1-21 10:50:00
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