7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：145.23 Kbytes 頁數(shù)：7 Pages

UTC

友順

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：189.43 Kbytes 頁數(shù)：6 Pages

UTC

友順

7 Amps竊?00Volts N-Channel MOSFET

■ Description The ET7N60 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. ■ Features ● RDS(ON) = 1.20?@VGS = 10 V ● Low gate cha

文件：470.34 Kbytes 頁數(shù)：5 Pages

ESTEK

伊泰克電子

isc N-Channel Mosfet Transistor

? DESCRITION ? Designed for high efficiency switch mode power supply. ? FEATURES ? Drain Current –ID= 7A@ TC=25℃ ? Drain Source Voltage- : VDSS= 600V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ? Avalanche Energy Specified ? Fast Switching ? Simple Drive Requirem

文件：260.579 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-CHANNEL POWER MOSFET

■ DESCRIPTION 7N60 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switch

文件：618.55 Kbytes 頁數(shù)：7 Pages

ZSELEC

淄博圣諾

600V N-Channel Power MOSFET

Features ● RDS(ON)

文件：2.05237 Mbytes 頁數(shù)：9 Pages

DYELEC

迪一電子

N-Channel Power MOSFET

DESCRIPTION The Nell 7N60 is a three-terminal silicon device with current conduction capability of 7A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V ,and max. threshold voltage of 4 volts. They are designed for use in applications. such as switched mode power su

文件：678.82 Kbytes 頁數(shù)：8 Pages

NELLSEMI

尼爾半導體

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：189.43 Kbytes 頁數(shù)：6 Pages

UTC

友順

7 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Ais a high voltage N-Channel enhancement mode power field effect transistors and is designed to have minimize on-state resistance , provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. This power MOSFET is well su

文件：297.02 Kbytes 頁數(shù)：7 Pages

UTC

友順

600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

文件：204.5 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體