600V, SMPS Series N-Channel IGBT

The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state v

文件：204.5 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

文件：168.06 Kbytes 頁數(shù)：11 Pages

INTERSIL

600V, SMPS Series N-Channel IGBT

文件：191.58 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

文件：189.45 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

文件：168.06 Kbytes 頁數(shù)：11 Pages

INTERSIL

600V, SMPS Series N-Channel IGBT

The HGTD7N60A4S, HGT1S7N60A4S, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower

文件：168.06 Kbytes 頁數(shù)：11 Pages

INTERSIL