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    首頁(yè)
                >7N6>規(guī)格書(shū)列表
                
    
            
    
                
    
                    
    型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
    
                    
    7N65B
    7A mps,650 Volts N-CHANNEL MOSFET
    
FEATURE
● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A
● Low gate charge
● Low Ciss
● Fast switching
● 100 avalanche tested
● Improved dv/dt capability
    文件：194.24 Kbytes 頁(yè)數(shù)：2 Pages
    CHONGQING
    平偉實(shí)業(yè)
    

    7N65C
    650V N-Channel MOSFET
    
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs
    文件：886.6 Kbytes 頁(yè)數(shù)：10 Pages
    FAIRCHILD
    仙童半導(dǎo)體
    

    7N65D
    N-CHANNEL POWER MOSFET
    
Features
● RDS(ON)
    文件：2.85034 Mbytes 頁(yè)數(shù)：9 Pages
    SUNMATE
    森美特
    

    7N65F
    N-CHANNEL POWER MOSFET
    
Features
● RDS(ON)
    文件：2.85034 Mbytes 頁(yè)數(shù)：9 Pages
    SUNMATE
    森美特
    

    7N65F
    7A mps,650 Volts N-CHANNEL MOSFET
    
FEATURE
● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A
● Low gate charge
● Low Ciss
● Fast switching
● 100 avalanche tested
● Improved dv/dt capability
    文件：194.24 Kbytes 頁(yè)數(shù)：2 Pages
    CHONGQING
    平偉實(shí)業(yè)
    

    7N65F
    N-channel power MOS tube
    
Features
* VDS (V)=650V
* RDS(ON) 
    文件：692.23 Kbytes 頁(yè)數(shù)：11 Pages
    UMW
    友臺(tái)半導(dǎo)體
    

    7N65F
    650V N-Channel Enhancement Mode MOSFET
    
Description
The AP7N65F/P is silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
mini
    文件：4.24023 Mbytes 頁(yè)數(shù)：5 Pages
    EVVOSEMI
    翊歐
    

    7N65-F
    N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR
    
DESCRIPTION
The UTC 7N65-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications 
    文件：347.84 Kbytes 頁(yè)數(shù)：8 Pages
    UTC
    友順
    

    7N65FJD2
    7A, 650V SUPER JUNCTION MOS POWER TRANSISTOR
    
DESCRIPTION
SVS7N65D(F)(MJ)(FJ)D2 is an N-channel enhancement mode high
voltage power MOSFETs produced using Silan’s super junction MOS
technology. It achieves low conduction loss and switching losses. It
leads the design engineers to their power converters with high
efficiency, high power de
    文件：281.13 Kbytes 頁(yè)數(shù)：10 Pages
    SILAN
    士蘭微
    

    7N65G
    N-CHANNEL POWER MOSFET
    
Features
● RDS(ON)
    文件：2.85034 Mbytes 頁(yè)數(shù)：9 Pages
    SUNMATE
    森美特
    

    
            
    
		
        
    
            
    
                
    技術(shù)參數(shù)
    
            
    
            
      
            	
    • Vdss(V)：
      650
    • Vgss(V)：
      30
    • Id(A)：
      7.4
    • Package：
      TO-220/TO-220F/TO-22...
    
            
    
        
    
            
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