7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ● 7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：193.27 Kbytes 頁(yè)數(shù)：2 Pages

CHONGQING

平偉實(shí)業(yè)

N-Channel Mosfet Transistor

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ISC

無(wú)錫固電

600V, 7A N-channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.\n\nThis advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in th

ONSEMI

安森美半導(dǎo)體

HiPerFAST IGBT Lightspeed Series

Features ? International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB ? High frequency IGBT ? High current handling capability ? HiPerFASTTM HDMOSTM process ? MOS Gate turn-on - drive simplicity Applications ? Uninterruptible power supplies (UPS) ? Switc

文件：79.19 Kbytes 頁(yè)數(shù)：2 Pages

IXYS

艾賽斯

N-CHANNEL POWER MOSFET

文件：2.48283 Mbytes 頁(yè)數(shù)：8 Pages

SUNMATE

森美特

7A mps,600 Volts N-CHANNEL MOSFET

FEATURE ● 7A,600V,RDS(ON)=1.2Ω@VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：193.27 Kbytes 頁(yè)數(shù)：2 Pages

CHONGQING

平偉實(shí)業(yè)