7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：189.43 Kbytes 頁數(shù)：6 Pages

UTC

友順

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：189.43 Kbytes 頁數(shù)：6 Pages

UTC

友順

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：189.43 Kbytes 頁數(shù)：6 Pages

UTC

友順

7.4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swi

文件：189.43 Kbytes 頁數(shù)：6 Pages

UTC

友順

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：145.23 Kbytes 頁數(shù)：7 Pages

UTC

友順

7.4 Amps, 600 Volts N-CHANNEL MOSFET

■ DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications

文件：145.23 Kbytes 頁數(shù)：7 Pages

UTC

友順

7.4 Amps, 600/650 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC 7N60Z is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications of switc

文件：194.8 Kbytes 頁數(shù)：6 Pages

UTC

友順

7 Amps, 650 Volts 7 Amps, 650 Volts

DESCRIPTION The UTC 7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in

文件：150.93 Kbytes 頁數(shù)：8 Pages

UTC

友順

7A mps,650 Volts N-CHANNEL MOSFET

FEATURE ● 7A,650V,RDS(ON)=1.4Ω @VGS=10V/3.5A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

文件：194.24 Kbytes 頁數(shù)：2 Pages

CHONGQING

平偉實業(yè)

Drain Current ID= 7A@ TC=25C

? FEATURES ? Drain Current ID= 7A@ TC=25℃ ? Drain Source Voltage : VDSS= 650V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 1.35Ω (Max) @VGS = 10 V ? Avalanche Energy Specified ? Fast Switching ? APPLICATIONS ? High speed switching applications in power supplies ? PWM

文件：137.09 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電