15A竊?50V N-CHANNEL MOSFET

文件：380.95 Kbytes 頁數(shù)：6 Pages

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可易亞半導(dǎo)體

11A竊?50V N-CHANNEL MOSFET

文件：461.65 Kbytes 頁數(shù)：6 Pages

KIA

可易亞半導(dǎo)體

5A竊?50V N-CHANNEL MOSFET

文件：558.06 Kbytes 頁數(shù)：6 Pages

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可易亞半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/65r025d2/marking.html">65R025D2；Package：PG-HDSOP-16；CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：1.06199 Mbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/65r025d2/marking.html">65R025D2；Package：PG-DSO-20；CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：857.66 Kbytes 頁數(shù)：10 Pages

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絲?。?a target="_blank" title="Marking" href="/65r025d2/marking.html">65R025D2；Package：PG-HSOF-8；CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：1.1951 Mbytes 頁數(shù)：12 Pages

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絲?。?a target="_blank" title="Marking" href="/65r007m2/marking.html">65R007M2；Package：PG-TO263-7；MOSFET CoolSiCa MOSFET 650 V G2

Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

文件：1.64594 Mbytes 頁數(shù)：16 Pages

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絲?。?a target="_blank" title="Marking" href="/65r009m1/marking.html">65R009M1；Package：PG-TO263-7；CoolSiC? M1 CoolSiC? MOSFET 650 V G1

Features ? Optimized switching behavior at higher currents ? Commutation robust fast body diode with low Qfr ? Superior gate oxide reliability ? Tj,max=175°C and excellent thermal behavior ? Lower RDS(on) and pulse current dependency on temperature ? Increased avalanche capability ? Compati

文件：1.37579 Mbytes 頁數(shù)：16 Pages

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絲?。?a target="_blank" title="Marking" href="/65r010m2/marking.html">65R010M2；Package：PG-TO263-7；CoolSiC? MOSFET 650 V G2

Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

文件：1.40627 Mbytes 頁數(shù)：17 Pages

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絲?。?a target="_blank" title="Marking" href="/65r015m2/marking.html">65R015M2；Package：PG-TO263-7；MOSFET CoolSiCa MOSFET 650 V G2

Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

文件：1.68212 Mbytes 頁數(shù)：16 Pages

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