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          首頁(yè) >65R>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          IMT65R015M2H

          絲?。?a target="_blank" title="Marking" href="/65r015m2/marking.html">65R015M2;Package:PG-HSOF-8;CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.36491 Mbytes 頁(yè)數(shù):18 Pages

          INFINEON

          英飛凌

          IMT65R020M2H

          絲?。?a target="_blank" title="Marking" href="/65r020m2/marking.html">65R020M2;Package:PG-HSOF-8;CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.36334 Mbytes 頁(yè)數(shù):18 Pages

          INFINEON

          英飛凌

          IMT65R022M1H

          絲?。?a target="_blank" title="Marking" href="/65r022m1/marking.html">65R022M1;Package:PG-HSOF-8;MOSFET 650 V CoolSiCa M1 SiC Trench Power Device

          Features ? Optimized switching behavior at higher currents ? Commutation robust fast body diode with low Qf ? Superior gate oxide reliability ? Tj,max=175°C and excellent thermal behavior ? Lower RDS(on) and pulse current dependency on temperature ? Increased avalanche capability ? Compatib

          文件:1.52403 Mbytes 頁(yè)數(shù):15 Pages

          INFINEON

          英飛凌

          IMT65R026M2H

          絲?。?a target="_blank" title="Marking" href="/65r026m2/marking.html">65R026M2;Package:PG-HSOF-8;CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.3649 Mbytes 頁(yè)數(shù):18 Pages

          INFINEON

          英飛凌

          IMTA65R020M2H

          絲印:65R020M2;Package:PG-LHSOF-4;SiC MOSFET CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:941.25 Kbytes 頁(yè)數(shù):17 Pages

          INFINEON

          英飛凌

          IMTA65R026M2H

          絲?。?a target="_blank" title="Marking" href="/65r026m2/marking.html">65R026M2;Package:PG-LHSOF-4;SiC MOSFET CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:936.7 Kbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

          IMW65R007M2H

          絲?。?a target="_blank" title="Marking" href="/65r007m2/marking.html">65R007M2;Package:PG-TO247-3;CoolSiCa MOSFET 650 V G2

          Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.50372 Mbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

          IMW65R010M2H

          絲?。?a target="_blank" title="Marking" href="/65r010m2/marking.html">65R010M2;Package:PG-TO247-3;SiC MOSFET CoolSiC? MOSFET 650 V G2

          Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.15173 Mbytes 頁(yè)數(shù):17 Pages

          INFINEON

          英飛凌

          IMW65R015M2H

          絲?。?a target="_blank" title="Marking" href="/65r015m2/marking.html">65R015M2;Package:PG-TO247-3;MOSFET CoolSiCa MOSFET 650 V G2

          Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.5321 Mbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

          IMW65R020M2H

          絲?。?a target="_blank" title="Marking" href="/65r020m2/marking.html">65R020M2;Package:PG-TO247-3;MOSFET CoolSiCa MOSFET 650 V G2

          Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ?

          文件:1.5164 Mbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

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          TO-263
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          6000
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          INFINEON
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          更多65R供應(yīng)商 更新時(shí)間2026-1-21 14:02:00
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