絲?。?a target="_blank" title="Marking" href="/65r025d2/marking.html">65R025D2；Package：PG-HDSOP-16；CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

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CoolGaN? Transistor 650 V G5

Features ? Enhancement mode transistor ? Ultra?fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate and output charge ? Superior commutation ruggedness ? 2 kV HBM ESD standards Potential applications Industrial, telecom, datacenter SMPS based on half?br

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CoolGaN ?晶體管 650 V G5

IGLT65R025D2 GaN功率晶體管可提高高頻操作下的效率。作為 CoolGaN ? 650 V G5 系列的一部分，它符合最高質(zhì)量標準，可實現(xiàn)具有卓越效率的高可靠性設(shè)計。它采用頂部冷卻的 TOLT 封裝，旨在實現(xiàn)各種工業(yè)應(yīng)用中的最佳功率耗散。 ? 650 V e-mode 功率晶體管\n? 超快速開關(guān)\n? 無反向恢復電荷\n? 具有反向傳導能力\n? 低柵極電荷、低輸出電荷\n? 卓越的換向穩(wěn)定性\n? 低動態(tài) RDS(on)\n? 高 ESD 耐受性：2 kV HBM - 1 kV CDM\n? 頂部冷卻封裝\n? 符合 JEDEC 認證 (JESD47、JESD22);

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英飛凌

CoolGaN? Transistor 650 V G5

Features ? Enhancement mode transistor ? Ultra?fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate and output charge ? Superior commutation ruggedness ? 2 kV HBM ESD standards Potential applications Industrial, telecom, datacenter SMPS based on half?br

文件：1.35357 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌

CoolGaN? Transistor 650 V G5

Features ? Enhancement mode transistor ? Ultra?fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate and output charge ? Superior commutation ruggedness ? 2 kV HBM ESD standards Potential applications Industrial, telecom, datacenter SMPS based on half?br

文件：1.35357 Mbytes 頁數(shù)：17 Pages

INFINEON

英飛凌