| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲?。?a target="_blank" title="Marking" href="/65r018c8/marking.html">65R018C8；Package：PG-HSOF-8；MOSFET 650V CoolMOS? CM8 Power Transistor Features ? Best in class 650V SJ MOSFET performance ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Integrated fast body diode and ESD protection ? .XT interconnection technology for best in class thermal performance Benefits ? Ease of u 文件：1.33865 Mbytes 頁數(shù)：16 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r025c8/marking.html">65R025C8；Package：PG-HSOF-8；MOSFET 650V CoolMOS? CM8 Power Transistor Features ? Best in class 650V SJ MOSFET performance ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Integrated fast body diode and ESD protection ? .XT interconnection technology for best in class thermal performance Benefits ? Ease of u 文件：1.33814 Mbytes 頁數(shù)：16 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r018c8/marking.html">65R018C8；Package：PG-TO247-3；MOSFET 650V CoolMOS? CM8 Power Transistor Features ? Best in class 650V SJ MOSFET performance ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Integrated fast body diode and ESD protection ? .XT interconnection technology for best in class thermal performance Benefits ? Ease of u 文件：1.12213 Mbytes 頁數(shù)：15 Pages | INFINEON 英飛凌 | INFINEON | ||
絲印：65R018F7；Package：PG-TO247-4-3；650V CoolMOSa CFD7 SJ Power Device Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature 文件：1.2694 Mbytes 頁數(shù)：14 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r018c8/marking.html">65R018C8；Package：PG-TO247-4；MOSFET 650V CoolMOS? CM8 Power Transistor ? Best in class 650V SJ MOSFET performance ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Integrated fast body diode and ESD protection ? .XT interconnection technology for best in class thermal performance 文件：999.52 Kbytes 頁數(shù)：15 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r022m1/marking.html">65R022M1；Package：PG-TO263-7-12；650 V CoolSiC? M1 SiC Trench Power Device 文件：1.5931 Mbytes 頁數(shù)：15 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r030m1/marking.html">65R030M1；Package：PG-TO263-7-12；650 V CoolSiC? M1 SiC Trench Power Device 文件：1.58151 Mbytes 頁數(shù)：15 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r027m1/marking.html">65R027M1；Package：PG-TO247-3；650 V CoolSiC? M1 SiC Trench Power Device 文件：1.46587 Mbytes 頁數(shù)：15 Pages | INFINEON 英飛凌 | INFINEON | ||
絲印：65R030M1；Package：PG-TO247-3；650 V CoolSiC? M1 SiC Trench Power Device 文件：1.41093 Mbytes 頁數(shù)：15 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r027m1/marking.html">65R027M1；Package：PG-TO247-4-3；650 V CoolSiC? M1 SiC Trench Power Device 文件：1.48466 Mbytes 頁數(shù)：15 Pages | INFINEON 英飛凌 | INFINEON |
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
TO-263 |
22+ |
6000 |
十年配單,只做原裝 |
詢價 | ||
Infineon/英飛凌 |
22+ |
TO-263 |
25000 |
只做原裝進口現(xiàn)貨,專注配單 |
詢價 | ||
INFINEON |
23+ |
TO-263 |
8000 |
只做原裝現(xiàn)貨 |
詢價 | ||
INFINEON |
23+ |
TO-263 |
7000 |
詢價 | |||
INFINEON/英飛凌 |
22+ |
TO-263 |
93868 |
詢價 | |||
INFINEON |
25+ |
TO-263 |
12300 |
獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證 |
詢價 | ||
23+ |
CDIP |
5000 |
原廠授權(quán)代理,海外優(yōu)勢訂貨渠道?？商峁┐罅繋齑?詳 |
詢價 | |||
MAGNACHIP/美格納 |
2540+ |
TO-220 |
8595 |
只做原裝正品假一賠十為客戶做到零風(fēng)險!! |
詢價 | ||
OSEN/歐芯 |
24+ |
TO-220FTO-252 |
60000 |
詢價 | |||
OSEN |
22+ |
TO-220FTO-252 |
6030 |
詢價 |
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