| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：65R026M2；Package：PG-TO247-3；SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件：1.14619 Mbytes 頁數(shù)：17 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r007m2/marking.html">65R007M2；Package：PG-TO247-4；CoolSiCa MOSFET 650 V G2 Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件：1.50764 Mbytes 頁數(shù)：16 Pages | INFINEON 英飛凌 | INFINEON | ||
絲印：65R010M2；Package：PG-TO247-4；SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件：1.03042 Mbytes 頁數(shù)：17 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r015m2/marking.html">65R015M2；Package：PG-TO247-4；MOSFET CoolSiCa MOSFET 650 V G2 Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件：1.52447 Mbytes 頁數(shù)：16 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r020m2/marking.html">65R020M2；Package：PG-TO247-4；MOSFET CoolSiCa MOSFET 650 V G2 Features ? Ultra-low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn-on even with 0 V turn-off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件：1.51521 Mbytes 頁數(shù)：16 Pages | INFINEON 英飛凌 | INFINEON | ||
絲印：65R026M2；Package：PG-TO247-4；SiC MOSFET CoolSiC? MOSFET 650 V G2 Features ? Ultra?low switching losses ? Benchmark gate threshold voltage, VGS(th) = 4.5 V ? Robust against parasitic turn?on even with 0 V turn?off gate voltage ? Flexible driving voltage and compatible with bipolar driving scheme ? Robust body diode operation under hard commutation events ? 文件：1.027589 Mbytes 頁數(shù)：17 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r008c8/marking.html">65R008C8；Package：PG-HDSOP-22；MOSFET 650V CoolMOS? CM8 Power Transistor Features ? Best in class 650V SJ MOSFET performance ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Integrated fast body diode and ESD protection ? .XT interconnection technology for best in class thermal performance Benefits ? Ease of u 文件：1.20438 Mbytes 頁數(shù)：16 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r017f7/marking.html">65R017F7；Package：PG-HDSOP-22；650V CoolMOSa CFD7 SJ Power Device Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature Benefits ? Excellent hard commutation ruggedness ? Extra safety margin for designs with increased bus voltage ? Enabling increased powe 文件：1.27133 Mbytes 頁數(shù)：14 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r018c8/marking.html">65R018C8；Package：PG-HDSOP-22；MOSFET 650V CoolMOS? CM8 Power Transistor Features ? Best in class 650V SJ MOSFET performance ? Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness ? Integrated fast body diode and ESD protection ? .XT interconnection technology for best in class thermal performance Benefits ? Ease of u 文件：1.20276 Mbytes 頁數(shù)：16 Pages | INFINEON 英飛凌 | INFINEON | ||
絲?。?a target="_blank" title="Marking" href="/65r029f7/marking.html">65R029F7；Package：PG-HDSOP-22；650V CoolMOSa CFD7 SJ Power Device Features ? Ultra-fast body diode ? 650V break down voltage ? Best-in-class RDS(on) ? Reduced switching losses ? Low RDS(on) dependency over temperature Benefits ? Excellent hard commutation ruggedness ? Extra safety margin for designs with increased bus voltage ? Enabling increased powe 文件：1.28138 Mbytes 頁數(shù)：14 Pages | INFINEON 英飛凌 | INFINEON |
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
Infineon/英飛凌 |
TO-263 |
22+ |
6000 |
十年配單,只做原裝 |
詢價(jià) | ||
Infineon/英飛凌 |
22+ |
TO-263 |
25000 |
只做原裝進(jìn)口現(xiàn)貨,專注配單 |
詢價(jià) | ||
INFINEON |
23+ |
TO-263 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
INFINEON |
23+ |
TO-263 |
7000 |
詢價(jià) | |||
INFINEON/英飛凌 |
22+ |
TO-263 |
93868 |
詢價(jià) | |||
INFINEON |
25+ |
TO-263 |
12300 |
獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證 |
詢價(jià) | ||
23+ |
CDIP |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道?？商峁┐罅繋齑?詳 |
詢價(jià) | |||
MAGNACHIP/美格納 |
2540+ |
TO-220 |
8595 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
詢價(jià) | ||
OSEN/歐芯 |
24+ |
TO-220FTO-252 |
60000 |
詢價(jià) | |||
INFINEON |
25+23+ |
TO-220F-3 |
43195 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
詢價(jià) |
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