絲?。?a target="_blank" title="Marking" href="/65r025d2/marking.html">65R025D2；Package：PG-HSOF-8；CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：1.1951 Mbytes 頁數(shù)：12 Pages

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CoolGaN ?晶體管 650 V G5

? 650 V e-mode power transistor\n? Ultrafast switching\n? No reverse-recovery charge\n? Capable of reverse conduction\n? Low gate charge, low output charge\n? Superior commutation ruggedness\n? Low dynamic RDS(on)\n? High ESD robustness: 2 kV HBM - 1 kV CDM\n? Bottom-side cooled package\n? JEDEC qua;

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英飛凌

CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：1.06199 Mbytes 頁數(shù)：12 Pages

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英飛凌

CoolGaN? Transistor 650 V G5

Features ? Enhancement mode transistor ? Ultra?fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate and output charge ? Superior commutation ruggedness ? 2 kV HBM ESD standards Potential applications Industrial, telecom, datacenter SMPS based on half?br

文件：1.35357 Mbytes 頁數(shù)：17 Pages

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英飛凌

CoolGaN? Gen2 650 V CoolGaN? enhancement?mode Power Transistor

Features ? Enhancement mode transistor ? Normally OFF switch ? Ultra fast switching ? No reverse?recovery charge ? Capable of reverse conduction ? Low gate charge, low output charge ? Superior commutation ruggedness ? ESD (HBM/CDM) JEDEC standards Benefits ? Improves system efficiency

文件：857.66 Kbytes 頁數(shù)：10 Pages

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英飛凌