絲印：6C；Package：SOT-323；We declare that the material of product compliance with RoHS requirements and Halogen Free.

FEATURES ● We declare that the material of product compliance with RoHS requirements and Halogen Free. ● ESD Protected:1000V

文件：1.33572 Mbytes 頁數(shù)：6 Pages

LEIDITECH

雷卯電子

絲?。?a target="_blank" title="Marking" href="/2n/marking.html">2N；Package：SC-70；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ?

文件：283.37 Kbytes 頁數(shù)：15 Pages

NEXPERIA

安世

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 60V,ID = 0.3A RDS(ON)

文件：295.95 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES ? RDS(ON), VGS@10V,IDS@500mA=3? ? RDS(ON), [email protected],IDS@200mA=4? ? Advanced Trench Process Technology ? High Density Cell Design For Ultra Low On-Resistance ? Very Low Leakage Current In Off Condition ? Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：161.6 Kbytes 頁數(shù)：5 Pages

PANJIT

強(qiáng)茂

N Channel Enhancement Mode MOSFET

FEATURE ● 60V/0.50A, RDS(ON) =2? @VGS = 10V ● 60V/0.20A, RDS(ON) = 4?@VGS = 4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and Maximum DC current capability ● ESD capability: 2000V ● SOT-23 package design

文件：268.3 Kbytes 頁數(shù)：7 Pages

STANSON

司坦森

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETs

N-channel MOSFET FEATURE ● High density cell design for Low RDS（on） ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.30336 Mbytes 頁數(shù)：5 Pages

TGS

絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

文件：619.19 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚(yáng)杰電子

Voltage controlled small signal switch

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

文件：1.49308 Mbytes 頁數(shù)：2 Pages

DGNJDZ

南晶電子

絲?。?a target="_blank" title="Marking" href="/702k/marking.html">702K；Package：SOT-23；SOT-23 Plastic-Encapsulate MOSFETS

FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● HMB ESD protected (2000V) APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.40128 Mbytes 頁數(shù)：5 Pages

CHENDA

辰達(dá)半導(dǎo)體

N-Channel Enhancement Mode MOSFET

Features ● 60V / 0.5A, RDS(ON) = 2.5 Ω @ VGS = 10V RDS(ON) = 2.5 Ω @ VGS = 4.5V ● SOT-23 for Surface Mount Package. Applications ● Direct Logic-level Interface: TTL/CMOS. ● Drivers: Relays, Lamps, Display, Transistor, etc ● Battery Operated Systems.

文件：463.82 Kbytes 頁數(shù)：3 Pages

SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司