絲印：7K；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input / Output Leakage ? Ultra-Small Surface Mount Package ? Pb Free / RoHS Compliant ? ESD HBM = 2000 V (Typical: 3000 V) as per JESD22 A114 and ESD CDM = 2000 V as per JESD2

文件：224.26 Kbytes 頁數(shù)：6 Pages

FAIRCHILD

仙童半導體

絲?。?a target="_blank" title="Marking" href="/704/marking.html">704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N??hannel, SOT??3

Features ? ESD Protected ? Low RDS(on) ? Surface Mount Package ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：106.85 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導體

絲印：704；Package：SOT-23；Small Signal MOSFET 60 V, 380 mA, Single, N??hannel, SOT??3

Features ? ESD Protected ? Low RDS(on) ? Surface Mount Package ? 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Applications

文件：103.16 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/7k/marking.html">7K***；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

文件：233.86 Kbytes 頁數(shù)：3 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-Channel 60 V (D-S) MOSFET

? Low on-resistance: 2 Ω ? Low threshold: 2 V (typ.) ? Low input capacitance: 25 pF ? Fast switching speed: 25 ns ? Low input and output leakage ? TrenchFET? power MOSFET ? 2000 V ESD protection

文件：1.0269 Mbytes 頁數(shù)：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

300m Amps, 60 Volts N-CHANNEL ENHANCEMENT MODE MOSFET

DESCRIPTION The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during operation. This device is suitable for use as a load switch or in PWM applications. ? FEATURES * Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF) * ESD Prot

文件：164.63 Kbytes 頁數(shù)：3 Pages

UTC

友順

N Channel MOSFET

INTERFACE AND SWITCHING APPLICATION. FEATURES ? ESD Protected 2000V. ? High density cell design for low RDS(ON). ? Voltage controlled small signal switch. ? Rugged and reliable. ? High saturation current capablity.

文件：74.38 Kbytes 頁數(shù)：4 Pages

KEC

KEC(Korea Electronics)

絲印：C7K；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Input Capacitance ? Fast Switching Speed

文件：127.12 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導體

N-Channel MOSFET

Features ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? High density cell design for low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? ESD Protected up to 2KV (HBM) ? Marking : 72K ? Halogen free available upon request by adding suff

文件：392.24 Kbytes 頁數(shù)：7 Pages

MCC

絲印：H702K；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.3A RDS(ON)

文件：697.75 Kbytes 頁數(shù)：8 Pages

RECTRON

麗正國際