絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：538.2 Kbytes 頁(yè)數(shù)：14 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 ? ID = 200 mA FEATURES ● Lower RDS(on) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

文件：162.29 Kbytes 頁(yè)數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

文件：444.49 Kbytes 頁(yè)數(shù)：14 Pages

MICROCHIP

微芯科技

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

文件：25.02 Kbytes 頁(yè)數(shù)：1 Pages

ZETEX

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

文件：116.2 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 頁(yè)數(shù)：13 Pages

ONSEMI

安森美半導(dǎo)體

N-channel vertical D-MOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?technology. Product availability: 2N7002 in SOT23. Features TrenchMOS? technology Very fast switching Logic level compatible Subminiature surface mount package. Applic

文件：76.05 Kbytes 頁(yè)數(shù)：12 Pages

PHI

PHI

OptiMOS??Small-Signal-Transistor

OptiMOS Small-Signal-Transistor Features ? N-channel ? Enhancement mode ? Logic level ? Avalanche rated ? fast switching ? Pb-free lead-plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：287.45 Kbytes 頁(yè)數(shù)：9 Pages

INFINEON

英飛凌

絲印：72***；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

文件：51.23 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

絲印：72***；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

文件：64.519 Kbytes 頁(yè)數(shù)：6 Pages

VISHAYVishay Siliconix

威世威世科技公司