| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio 文件：513.419 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/mm1/marking.html">MM1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio 文件：513.419 Kbytes 頁數(shù)：7 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
N-Channel MOSFET Features ? Halogen free available upon request by adding suffix -HF ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? High density cell design for low RDS(ON) ? Rugged and reliable ? Voltage controlled small signal switch ? Operating Junction Temperature: -55 to + 文件：102.89 Kbytes 頁數(shù)：2 Pages | MCC | MCC | ||
N-Channel Enhanceent Mode Field Effect Transistor Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage 文件：45.18 Kbytes 頁數(shù)：1 Pages | KEXIN 科信電子 | KEXIN | ||
Super high dense cell design for low RDS (ON). FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package. 文件：388 Kbytes 頁數(shù)：5 Pages | FCI 富加宜 | FCI | ||
絲印：703*；Package：SOT-23；Small Signal MOSFET 60 V, 310 mA, Single, N??hannel, SOT??3 Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoH 文件：104.79 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp 文件：205.12 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/-2e/marking.html">-2E；Package：SOT-23；N-channel TrenchMOS FET General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Surface-mounted package ■ Very fast switching ■ TrenchMOS technology Applications ■ Logic level translator ■ High-sp 文件：81.36 Kbytes 頁數(shù)：11 Pages | PHI PHI | PHI | ||
絲印：7E**；Package：SOT-23；N-Channel 60-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low On-Resistance: 3 ? ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 7.5 ns ? Low Input and Output Leakage ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low Offset Voltage ? Low-Vo 文件：85.19 Kbytes 頁數(shù)：5 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capaci 文件：419.09 Kbytes 頁數(shù)：4 Pages | DIODES 美臺半導(dǎo)體 | DIODES |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
60
- VGS Max (V)：
±20
- VGS(th) Max (V)：
2.5
- ID Max (A)：
0.115
- PD Max (W)：
0.2
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
7500
- RDS(on) Max @ VGS = 10 V(mΩ)：
7500
- Qg Typ @ VGS = 10 V (nC)：
1
- Ciss Typ (pF)：
20
- Package Type：
SOT-23-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
恩XP |
15+ |
SOT23 |
30000 |
全新原裝 |
詢價 | ||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價 | ||||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價 | ||||
ON |
17+18+ |
SOT23 |
488459 |
原廠原裝,本地現(xiàn)貨庫存,假一罰十! |
詢價 | ||
長電 |
11+ |
SOT23 |
50000 |
深圳現(xiàn)貨 |
詢價 | ||
恩XP |
24+/25+ |
SOT236 |
99000 |
100%原裝正品真實庫存,支持實單 |
詢價 | ||
ON-SEMI |
22+ |
N/A |
9000 |
原裝正品 香港現(xiàn)貨 |
詢價 | ||
恩XP |
1118 |
SOT236 |
340 |
現(xiàn)貨庫存,有單來談 |
詢價 | ||
恩XP |
25+ |
7589 |
全新原裝現(xiàn)貨,支持排單訂貨,可含稅開票 |
詢價 | |||
恩XP |
16+ |
SOT23 |
12350 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 |
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