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          首頁(yè) >2N7002>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          2N7002K

          絲?。?a target="_blank" title="Marking" href="/7k/marking.html">7K***;Package:SOT-23;N-Channel 60-V (D-S) MOSFET

          DESCRIPTION The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the ?55 to 125°C temperature ranges under the pulsed 0-V to 10-V gate drive. The saturated output impedance is best fit at the

          文件:233.86 Kbytes 頁(yè)數(shù):3 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          2N7002K

          N-Channel MOSFET

          Features ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? High density cell design for low RDS(ON) ? Voltage controlled small signal switch ? Rugged and reliable ? ESD Protected up to 2KV (HBM) ? Marking : 72K ? Halogen free available upon request by adding suff

          文件:392.24 Kbytes 頁(yè)數(shù):7 Pages

          MCC

          2N7002K

          絲?。?a target="_blank" title="Marking" href="/h702k/marking.html">H702K;Package:SOT-23;N-Channel Enhancement Mode Power MOSFET

          General Features VDS = 60V,ID = 0.3A RDS(ON)

          文件:697.75 Kbytes 頁(yè)數(shù):8 Pages

          RECTRON

          麗正國(guó)際

          2N7002K

          絲?。?a target="_blank" title="Marking" href="/h702k/marking.html">H702K;Package:SOT-23;N-Channel Enhancement Mode Power MOSFET

          General Features VDS = 60V,ID = 0.3A RDS(ON)

          文件:701.39 Kbytes 頁(yè)數(shù):8 Pages

          RECTRON

          麗正國(guó)際

          2N7002K

          絲?。?a target="_blank" title="Marking" href="/-2k/marking.html">-2K;Package:SOT-23;N-channel TrenchMOS FET

          General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level compatible ■ Very fast switching ■ Subminiature surface-mounted package ■ Gate-source ElectroStatic Discharge (ESD) protection diodes Applicat

          文件:94.25 Kbytes 頁(yè)數(shù):11 Pages

          恩XP

          恩XP

          2N7002K

          60V ESD Protected N-Channel Enhancement Mode MOSFET

          RDS(ON), VGS @10V, IDS@ 500mA=2? RDS(ON), VGS @4.5V, IDS@ 200mA=3? FEATURES ? Advanced Trench Process Technology ? Ultra Low On Resistance : 2? ? Fast Switching Speed : 20ns ? Low Input and Output Leakage Current ? 2KV ESD Protection ? Specially Designed for High Speed Circuit, Battery Ope

          文件:251.12 Kbytes 頁(yè)數(shù):4 Pages

          HY

          虹揚(yáng)科技

          2N7002K

          N-Channel Enhanceent Mode Field Effect Transistor

          Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

          文件:41.11 Kbytes 頁(yè)數(shù):1 Pages

          KEXIN

          科信電子

          2N7002K

          N-CHannel Enhancement Mode MOSFET

          High Speed Switching Application Features ? ESD rating: 1000V (HBM) ? Low On-Resistance: RDS(on)

          文件:242.86 Kbytes 頁(yè)數(shù):6 Pages

          KODENSHI

          可天士

          2N7002K

          絲?。?a target="_blank" title="Marking" href="/72k/marking.html">72K;Package:SOT-23;Plastic-Encapsulate MOSFETS

          MOSFET( N-Channel ) Features: 1. RDS(ON) is low; 2. The control trigger is sensitive; 3. With electrostatic protection; Applications: Used for general switching and phase circuits.

          文件:307.7 Kbytes 頁(yè)數(shù):1 Pages

          SHENZHENSLS

          三聯(lián)盛

          2N7002K

          SOT-23 Plastic-Encapsu l ate MOSFET

          N -Channel MOSFET Features ● High density cell design for Low RDS(on) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability ● ESD protected Applications ● Load Switch for Portable Devices ● DC/DC Converter

          文件:2.46889 Mbytes 頁(yè)數(shù):5 Pages

          HDSEMI

          海德半導(dǎo)體

          技術(shù)參數(shù)

          • Pb-free:

            Pb

          • Halide free:

            H

          • Status:

            Active

          • Channel Polarity:

            N-Channel

          • Configuration:

            Single

          • V(BR)DSS Min (V):

            60

          • VGS Max (V):

            ±20

          • VGS(th) Max (V):

            2.5

          • ID Max (A):

            0.115

          • PD Max (W):

            0.2

          • RDS(on) Max @ VGS = 4.5 V(mΩ):

            7500

          • RDS(on) Max @ VGS = 10 V(mΩ):

            7500

          • Qg Typ @ VGS = 10 V (nC):

            1

          • Ciss Typ (pF):

            20

          • Package Type:

            SOT-23-3

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          恩XP
          15+
          SOT23
          30000
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          更多2N7002供應(yīng)商 更新時(shí)間2021-9-16 14:01:00
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