| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 500 mAmpere CONSTRUCTION * N-Channel Enhancement with ESD protection in input FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capabilit 文件：576.94 Kbytes 頁數(shù)：2 Pages | CHENMKO 力勤 | CHENMKO | ||
N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.300 Ampere CONSTRUCTION * N-Channel Enhancement with ESD protection in input MARKING * PK1 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation 文件：532.57 Kbytes 頁數(shù)：5 Pages | CHENMKO 力勤 | CHENMKO | ||
N-Channel 60 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low On-Resistance: 3 ? ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 7.5 ns ? Low Input and Output Leakage ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low Offset Voltage ? Low-Vo 文件：183.33 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Small Signal MOSFET 60 V, 310 mA, Single, N??hannel, SOT??3 Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoH 文件：104.79 Kbytes 頁數(shù)：5 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp 文件：205.12 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
N-Channel 60 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low On-Resistance: 3 ? ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 7.5 ns ? Low Input and Output Leakage ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low Offset Voltage ? Low-Vo 文件：194.4 Kbytes 頁數(shù)：8 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp 文件：205.12 Kbytes 頁數(shù)：6 Pages | ONSEMI 安森美半導體 | ONSEMI | ||
絲?。?a target="_blank" title="Marking" href="/-7f/marking.html">-7F；Package：SOT-23；TrenchMOS Logic Level FET General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Very fast switching ■ Surface-mounted package ■ TrenchMOS technology Applications ■ Logic level translator ■ High- 文件：126.94 Kbytes 頁數(shù)：11 Pages | PHI PHI | PHI | ||
N-Channel Enhancement-Mode Vertical DMOS FET General Description The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi 文件：444.49 Kbytes 頁數(shù)：14 Pages | MICROCHIP 微芯科技 | MICROCHIP | ||
MOSFET MOSFET (N-Channel) RoHS Device Features Power dissipation : 0.35W 文件：183.7 Kbytes 頁數(shù)：4 Pages | COMCHIP 典琦 | COMCHIP |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
60
- VGS Max (V)：
±20
- VGS(th) Max (V)：
2.5
- ID Max (A)：
0.115
- PD Max (W)：
0.2
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
7500
- RDS(on) Max @ VGS = 10 V(mΩ)：
7500
- Qg Typ @ VGS = 10 V (nC)：
1
- Ciss Typ (pF)：
20
- Package Type：
SOT-23-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
恩XP |
15+ |
SOT23 |
30000 |
全新原裝 |
詢價 | ||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價 | ||||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價 | ||||
ON |
17+18+ |
SOT23 |
488459 |
原廠原裝,本地現(xiàn)貨庫存,假一罰十! |
詢價 | ||
長電 |
11+ |
SOT23 |
50000 |
深圳現(xiàn)貨 |
詢價 | ||
恩XP |
24+/25+ |
SOT236 |
99000 |
100%原裝正品真實庫存,支持實單 |
詢價 | ||
ON-SEMI |
22+ |
N/A |
9000 |
原裝正品 香港現(xiàn)貨 |
詢價 | ||
恩XP |
1118 |
SOT236 |
340 |
現(xiàn)貨庫存,有單來談 |
詢價 | ||
恩XP |
25+ |
7589 |
全新原裝現(xiàn)貨,支持排單訂貨,可含稅開票 |
詢價 | |||
恩XP |
16+ |
SOT23 |
12350 |
進口原裝現(xiàn)貨/價格優(yōu)勢! |
詢價 |
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