N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 500 mAmpere CONSTRUCTION * N-Channel Enhancement with ESD protection in input FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation current capabilit

文件：576.94 Kbytes 頁數(shù)：2 Pages

CHENMKO

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 500 mAmpereCONSTRUCTION\n* N-Channel Enhancement with ESD protection in inputFEATURE\n* Small surface mounting type. (SOT-23)\n* High density cell design for low RDS(ON).\n* Suitable for high packing density.\n* Rugged and reliable.\n* High saturation current capability.\n*

Chenmko

力勤

N-Channel Enhancement Mode Field Effect Transistor

VOLTAGE 60 Volts CURRENT 0.300 Ampere CONSTRUCTION * N-Channel Enhancement with ESD protection in input MARKING * PK1 FEATURE * Small surface mounting type. (SOT-23) * High density cell design for low RDS(ON). * Suitable for high packing density. * Rugged and reliable. * High saturation

文件：532.57 Kbytes 頁數(shù)：5 Pages

CHENMKO

力勤

TrenchMOS Logic Level FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Very fast switching ■ Surface-mounted package ■ TrenchMOS technology Applications ■ Logic level translator ■ High-

文件：126.94 Kbytes 頁數(shù)：11 Pages

PHI

PHI