絲印：7002；Package：SOT-23；N-Channel Enhancement Mode Field Effect

Transistor Features ?High density cell design for low RDS(ON)?Voltage controlled small signal switching?High saturation current capability?High speed switching?-CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP capable

文件：458.28 Kbytes 頁數(shù)：3 Pages

GWSEMI

唯圣電子

絲印：LP-；Package：SOT-23；60 V, 0.3 A N-channel Trench MOSFET

General description ESD protected N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● ESD protect

文件：83.83 Kbytes 頁數(shù)：13 Pages

恩XP

N-Channel Enhancement MOSFET

Features ? VDS=60V, ID=0.32A ? RDS(ON)=1.6Ω@VGS=10V(Typ.) ? RDS(ON)=2.0Ω@VGS=4.5V(Typ.) ? High Power and current handing capability ? Lead free product is acquired ? Surface Mount Package Main Applications ? Battery Protection ? Load Switch ? Power Management

文件：213.62 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

絲?。?a target="_blank" title="Marking" href="/702/marking.html">702；Package：SOT-363；Double N-CHANNEL MOSFET in a SOT-363 Plastic Package.

Features Sensitive gate trigger current and Low Holding current.ESD protected diode. ESD rating:2200V HBM Halogen-free

文件：483.53 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

Dual N-Channel MOSFET

Features: * Low On-Resistance : 7.5 Ω * Low Input Capacitance: 22PF * Low Out put Capacitance : 11PF * Low Threshole :1 .5V(TYE) * Fast Switching Speed : 11ns Mechanical Data: * Case: SOT-363, Molded Plastic * Case Material-UL Flammability Rating 94V-0 * Terminals: Solderable per MIL-STD-

文件：77.92 Kbytes 頁數(shù)：3 Pages

WEITRON

300m Amps, 60 Volts DUAL N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON) * Voltage Controlled Small Sign

文件：306.81 Kbytes 頁數(shù)：6 Pages

UTC

友順

絲?。?a target="_blank" title="Marking" href="/k72/marking.html">K72；Package：SOT-363；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (Rds(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features ? Dual N-Channel MOSFET ? Low On-Resistance ? Low Gate Threshold Voltage ? Lo

文件：66.24 Kbytes 頁數(shù)：3 Pages

DIODES

美臺半導體

N-Channel MOSFET

Features ? Halogen free available upon request by adding suffix -HF ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? High density cell design for low RDS(ON) ? Rugged and reliable ? Voltage controlled small signal switch ? Operating Junction Temperature: -55 to +

文件：102.89 Kbytes 頁數(shù)：2 Pages

MCC

Dual N-channel MOSFET

Dual N-channel MOSFET FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

文件：1.46294 Mbytes 頁數(shù)：5 Pages

JIANGSU

長電科技

Dual N-Channel MOSFET

■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON)

文件：1.39948 Mbytes 頁數(shù)：3 Pages

KEXIN

科信電子