絲?。?a target="_blank" title="Marking" href="/703/marking.html">703*；Package：SOT-23；Small Signal MOSFET 60 V, 310 mA, Single, N??hannel, SOT??3

Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoH

文件：104.79 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

Small Signal MOSFET Single N??hannel, 60 V, 310 mA, 2.5 Ohm

Features ? Low RDS(on) ? Small Footprint Surface Mount Package ? Trench Technology ? S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Comp

文件：205.12 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/-2e/marking.html">-2E；Package：SOT-23；N-channel TrenchMOS FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Surface-mounted package ■ Very fast switching ■ TrenchMOS technology Applications ■ Logic level translator ■ High-sp

文件：81.36 Kbytes 頁數(shù)：11 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/7e/marking.html">7E**；Package：SOT-23；N-Channel 60-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low On-Resistance: 3 ? ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 7.5 ns ? Low Input and Output Leakage ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low Offset Voltage ? Low-Vo

文件：85.19 Kbytes 頁數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capaci

文件：419.09 Kbytes 頁數(shù)：4 Pages

DIODES

美臺半導(dǎo)體

Super high dense cell design for low RDS (ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：388 Kbytes 頁數(shù)：5 Pages

FCI

富加宜

N-Channel Enhanceent Mode Field Effect Transistor

Features ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage

文件：45.18 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

N-Channel 60-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? 1200V ESD Protection ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low

文件：1.00502 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

N-CHANNEL ENHANCEMENT-MODE MOSFET

Features ? Low On-Resistance: RDS(ON) ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage

文件：152.76 Kbytes 頁數(shù)：3 Pages

ZSELEC

淄博圣諾

N-CHANNEL ENHANCEMENT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ? Low On-Resistance ? Fast Switching Speed ? Low-voltage drive ? Easily designed drive circuits ? Pb-Free Package is available. ? Can protect against static electricity 1KV when the product is in use. ? AEC-Q101 Pass

文件：999.07 Kbytes 頁數(shù)：4 Pages

YEASHIN

亞昕科技