| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? Motor Control ? Power Management Functions Features and Benefits ? N-Cha 文件：154.02 Kbytes 頁數(shù)：4 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa 文件：148.68 Kbytes 頁數(shù)：6 Pages | UTC 友順 | UTC | ||
絲?。?a target="_blank" title="Marking" href="/7002a./marking.html">7002A.；Package：SOT-23；MOSFET Features - Trench power MV MOSFET technology. - Voltage controlled small signal switch. - Low input capacitance. - Fast switching speed. - Low input / output leakage. 文件：573.64 Kbytes 頁數(shù)：6 Pages | COMCHIP 典琦 | COMCHIP | ||
絲?。?a target="_blank" title="Marking" href="/nj/marking.html">NJ；Package：SOT-23；N-Channel Enhancement MOSFET High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(on) = 3.1 Ω (typ.) (@VGS = 5 V) RDS(on) = 3.2 Ω (typ.) (@VGS = 4.5 V) 文件：965.81 Kbytes 頁數(shù)：5 Pages | YFWDIODE 佑風(fēng)微 | YFWDIODE | ||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 °C ? Trench MOSFET technology ? El 文件：288.64 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/qk/marking.html">QK；Package：DFN1110D-3；60 V, N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1110D-3 (SOT8015) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 文件：301.46 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
60 V, N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Logic-level compatible ? Extended temperature range Tj = 175 °C ? Trench MOSFET technology ? El 文件：288.64 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：D3；Package：SOT1268；60 V, dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench 文件：317.65 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance 文件：240.84 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
N-CHANNEL ENHANCEMENT MODE MOSFET Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitance 文件：240.84 Kbytes 頁數(shù)：5 Pages | DIODES 美臺半導(dǎo)體 | DIODES |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
60
- VGS Max (V)：
±20
- VGS(th) Max (V)：
2.5
- ID Max (A)：
0.115
- PD Max (W)：
0.2
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
7500
- RDS(on) Max @ VGS = 10 V(mΩ)：
7500
- Qg Typ @ VGS = 10 V (nC)：
1
- Ciss Typ (pF)：
20
- Package Type：
SOT-23-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
恩XP |
15+ |
SOT23 |
30000 |
全新原裝 |
詢價(jià) | ||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價(jià) | ||||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價(jià) | ||||
ON |
17+18+ |
SOT23 |
488459 |
原廠原裝,本地現(xiàn)貨庫存,假一罰十! |
詢價(jià) | ||
長電 |
11+ |
SOT23 |
50000 |
深圳現(xiàn)貨 |
詢價(jià) | ||
恩XP |
24+/25+ |
SOT236 |
99000 |
100%原裝正品真實(shí)庫存,支持實(shí)單 |
詢價(jià) | ||
ON-SEMI |
22+ |
N/A |
9000 |
原裝正品 香港現(xiàn)貨 |
詢價(jià) | ||
恩XP |
1118 |
SOT236 |
340 |
現(xiàn)貨庫存,有單來談 |
詢價(jià) | ||
恩XP |
25+ |
7589 |
全新原裝現(xiàn)貨,支持排單訂貨,可含稅開票 |
詢價(jià) | |||
恩XP |
16+ |
SOT23 |
12350 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢! |
詢價(jià) |
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