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          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO
          
                    
          2N7002AQ-7
          N-CHANNEL ENHANCEMENT MODE MOSFET
          
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Features and Benefits
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance

          文件：240.84 Kbytes 頁(yè)數(shù)：5 Pages
          DIODES
          美臺(tái)半導(dǎo)體
          

          2N7002AX
          N-CHANNEL ENHANCEMENT MODE MOSFET
          
Features
? N-Channel MOSFET
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? ESD Protected up to 1kV
? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
? Halogen and Antimony Free. “Green” Device (Note 3)
? Qualified to AEC-Q101 Stand
          文件：304.6 Kbytes 頁(yè)數(shù)：5 Pages
          DIODES
          美臺(tái)半導(dǎo)體
          

          2N7002AX-13
          絲?。?a target="_blank" title="Marking" href="/7a/marking.html">7A；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET
          
Features
? N-Channel MOSFET
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? ESD Protected up to 1kV
? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
? Halogen and Antimony Free. “Green” Device (Note 3)
? Qualified to AEC-Q101 Stand
          文件：304.6 Kbytes 頁(yè)數(shù)：5 Pages
          DIODES
          美臺(tái)半導(dǎo)體
          

          2N7002AX-7
          絲?。?a target="_blank" title="Marking" href="/7a/marking.html">7A；Package：SOT23；N-CHANNEL ENHANCEMENT MODE MOSFET
          
Features
? N-Channel MOSFET
? Low On-Resistance
? Low Gate Threshold Voltage
? Low Input Capacitance
? Fast Switching Speed
? ESD Protected up to 1kV
? Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
? Halogen and Antimony Free. “Green” Device (Note 3)
? Qualified to AEC-Q101 Stand
          文件：304.6 Kbytes 頁(yè)數(shù)：5 Pages
          DIODES
          美臺(tái)半導(dǎo)體
          

          2N7002B
          絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS
          
FEATURE
* High density cell design for low RDS(ON)
* Voltage controlled small signal switch
* Rugged and reliable
* High saturation current capability
          文件：886.78 Kbytes 頁(yè)數(shù)：4 Pages
          UMW
          友臺(tái)半導(dǎo)體
          

          2N7002B
          絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS
          
FEATURE
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
          文件：440.66 Kbytes 頁(yè)數(shù)：4 Pages
          EVVOSEMI
          翊歐
          

          2N7002BK
          絲?。?a target="_blank" title="Marking" href="/7200/marking.html">7200；Package：SOT23；60V N-Channel Mosfet
          
Application
Direct logic-level interface: TTL/CMOS
Drivers: relays, solenoids, lamps, hammers display,
memories, transistors, etc.
Battery operated systems
Solid-state relays
          文件：1.01958 Mbytes 頁(yè)數(shù)：3 Pages
          TECHPUBLIC
          臺(tái)舟電子
          

          2N7002BK
          絲?。?a target="_blank" title="Marking" href="/72kc/marking.html">72KC；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET
          
Description
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance
● Fast Switching Speed
● Low Input / Output Leakage

General Features
● VDS 60V
● ID 300mA 
● RDS(ON)( at VGS=10V) 
          文件：7.23256 Mbytes 頁(yè)數(shù)：5 Pages
          LEIDITECH
          雷卯電子
          

          2N7002BK
          絲印：LN；Package：TO-236AB；60 V, 350 mA N-channel Trench MOSFET
          
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small
SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using
Trench MOSFET technology.
1.2 Features and benefits
 Logic-level compatible
 Very fast switching
 Trench MOSFET technology
 ESD pr
          文件：737.7 Kbytes 頁(yè)數(shù)：16 Pages
          NEXPERIA
          安世
          

          2N7002BK
          絲?。?a target="_blank" title="Marking" href="/ln/marking.html">LN；Package：SOT23；60 V, 350 mA N-channel Trench MOSFET
          
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits
? Logic-level compatible
? Very fast switching
? Trench MOSFET technology
? ESD
          文件：286.97 Kbytes 頁(yè)數(shù)：15 Pages
          NEXPERIA
          安世
          

          
            
          
		
        
          
            
          
                
          技術(shù)參數(shù)
          
            
          
            
            
            	
          • Pb-free：
            Pb
          • Halide free：
            H
          • Status：
            Active
          • Channel Polarity：
            N-Channel
          • Configuration：
            Single
          • V(BR)DSS Min (V)：
            60
          • VGS Max (V)：
            ±20
          • VGS(th) Max (V)：
            2.5
          • ID Max (A)：
            0.115
          • PD Max (W)：
            0.2
          • RDS(on) Max @ VGS = 4.5 V(mΩ)：
            7500
          • RDS(on) Max @ VGS = 10 V(mΩ)：
            7500
          • Qg Typ @ VGS = 10 V (nC)：
            1
          • Ciss Typ (pF)：
            20
          • Package Type：
            SOT-23-3
          
            
          
        
          
            
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          恩XP
          		

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          恩XP
          		

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          SOT23
          		

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