| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
絲印：LN-；Package：SOT-23；60 V, 350 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protecti 文件：176.53 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
60 V, 350 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：286.97 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
60 V, 350 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protecti 文件：176.53 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/z8/marking.html">Z8；Package：SC-101；60 V, 450 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec 文件：906 Kbytes 頁數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/z8/marking.html">Z8；Package：SOT-883；60 V, single N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ?Very fast switching ?Trench MOSFETtechnology ?ESD protect 文件：667.35 Kbytes 頁數(shù)：15 Pages | 恩XP | 恩XP | ||
60 V, single N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ?Very fast switching ?Trench MOSFETtechnology ?ESD protect 文件：667.35 Kbytes 頁數(shù)：15 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/0000/marking.html">0000；Package：SOT883B；60 V, single N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Very fast switching ? Trench MOSFET technology ? ESD prote 文件：1.4098 Mbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/zt/marking.html">ZT；Package：TSSOP6；60 V, 300 mA dual N-channel Trench MOSFET 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technolog 文件：298.18 Kbytes 頁數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：ZT*；Package：SOT-363；60 V, 300 mA dual N-channel Trench MOSFET General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET echnology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● ESD p 文件：384.54 Kbytes 頁數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/zt/marking.html">ZT；Package：SC-88；60 V, 300 mA dual N-channel Trench MOSFET 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolog 文件：931.08 Kbytes 頁數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA |
技術(shù)參數(shù)
- Pb-free：
Pb
- Halide free：
H
- Status：
Active
- Channel Polarity：
N-Channel
- Configuration：
Single
- V(BR)DSS Min (V)：
60
- VGS Max (V)：
±20
- VGS(th) Max (V)：
2.5
- ID Max (A)：
0.115
- PD Max (W)：
0.2
- RDS(on) Max @ VGS = 4.5 V(mΩ)：
7500
- RDS(on) Max @ VGS = 10 V(mΩ)：
7500
- Qg Typ @ VGS = 10 V (nC)：
1
- Ciss Typ (pF)：
20
- Package Type：
SOT-23-3
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
恩XP |
15+ |
SOT23 |
30000 |
全新原裝 |
詢價(jià) | ||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價(jià) | ||||
25+ |
50 |
公司現(xiàn)貨庫存 |
詢價(jià) | ||||
ON |
17+18+ |
SOT23 |
488459 |
原廠原裝,本地現(xiàn)貨庫存,假一罰十! |
詢價(jià) | ||
長電 |
11+ |
SOT23 |
50000 |
深圳現(xiàn)貨 |
詢價(jià) | ||
恩XP |
24+/25+ |
SOT236 |
99000 |
100%原裝正品真實(shí)庫存,支持實(shí)單 |
詢價(jià) | ||
ON-SEMI |
22+ |
N/A |
9000 |
原裝正品 香港現(xiàn)貨 |
詢價(jià) | ||
恩XP |
1118 |
SOT236 |
340 |
現(xiàn)貨庫存,有單來談 |
詢價(jià) | ||
恩XP |
25+ |
7589 |
全新原裝現(xiàn)貨,支持排單訂貨,可含稅開票 |
詢價(jià) | |||
恩XP |
16+ |
SOT23 |
12350 |
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢! |
詢價(jià) |
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