| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
2N7002B | 絲印：7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS FEATURE * High density cell design for low RDS(ON) * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability 文件：886.78 Kbytes 頁(yè)數(shù)：4 Pages | UMW 友臺(tái)半導(dǎo)體 | UMW | |
2N7002B | 絲?。?a target="_blank" title="Marking" href="/7002/marking.html">7002；Package：SOT-23；SOT- 23 Plastic-Encapsulate MOSFETS FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability 文件：440.66 Kbytes 頁(yè)數(shù)：4 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
2N7002B | N-CHannel Enhancement Mode MOSFET 文件：242.78 Kbytes 頁(yè)數(shù)：6 Pages | KODENSHI 可天士 | KODENSHI | |
絲?。?a target="_blank" title="Marking" href="/72kc/marking.html">72KC；Package：SOT-23；60V N-Channel Enhancement Mode MOSFET Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage General Features ● VDS 60V ● ID 300mA ● RDS(ON)( at VGS=10V) 文件：7.23256 Mbytes 頁(yè)數(shù)：5 Pages | LEIDITECH 雷卯電子 | LEIDITECH | ||
絲印：LN-；Package：SOT-23；60 V, 350 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protecti 文件：176.53 Kbytes 頁(yè)數(shù)：16 Pages | 恩XP | 恩XP | ||
絲?。?a target="_blank" title="Marking" href="/ln/marking.html">LN；Package：SOT23；60 V, 350 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：286.97 Kbytes 頁(yè)數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲?。?a target="_blank" title="Marking" href="/ln/marking.html">LN；Package：TO-236AB；60 V, 350 mA N-channel Trench MOSFET 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD pr 文件：737.7 Kbytes 頁(yè)數(shù)：16 Pages | NEXPERIA 安世 | NEXPERIA | ||
絲印：7200；Package：SOT23；60V N-Channel Mosfet Application Direct logic-level interface: TTL/CMOS Drivers: relays, solenoids, lamps, hammers display, memories, transistors, etc. Battery operated systems Solid-state relays 文件：1.01958 Mbytes 頁(yè)數(shù)：3 Pages | TECHPUBLIC 臺(tái)舟電子 | TECHPUBLIC | ||
60 V, 350 mA N-channel Trench MOSFET 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits ? Logic-level compatible ? Very fast switching ? Trench MOSFET technology ? ESD 文件：286.97 Kbytes 頁(yè)數(shù)：15 Pages | NEXPERIA 安世 | NEXPERIA | ||
60 V, 350 mA N-channel Trench MOSFET General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ■ Logic-level compatible ■ Very fast switching ■ Trench MOSFET technology ■ ESD protecti 文件：176.53 Kbytes 頁(yè)數(shù)：16 Pages | 恩XP | 恩XP |
技術(shù)參數(shù)
- Type：
N
- Vds(V)：
60
- Vgs(V)：
20
- ESD：
YES
- Id_Max(A)：
0.3
- Vth_Min(V)：
1
- Vth_Typ(V)：
1.5
- Vth_Max(V)：
2.5
- Ron(mΩ)_Vgs=10V_Typ：
1700
- Ron(mΩ)_Vgs=10V_Max：
3000
- Ron(mΩ)_Vgs=4.5V_Typ：
1800
- Ron(mΩ)_Vgs=4.5V_Max：
4000
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
AUK |
2022+ |
SOT-23 |
40000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
友臺(tái) |
23+ |
SOT-23 |
11200 |
優(yōu)勢(shì)原裝現(xiàn)貨假一賠十 |
詢價(jià) | ||
24+ |
N/A |
65000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
UMW |
2226 |
con |
3000 |
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格 |
詢價(jià) | ||
Siliup(矽普) |
23+ |
SOT-23 |
5700 |
三極管/MOS管/晶體管 > 場(chǎng)效應(yīng)管(MOSFET) |
詢價(jià) | ||
MCC/美微科 |
2511 |
SOT-23 |
360000 |
電子元器件采購(gòu)降本30%!原廠直采,砍掉中間差價(jià) |
詢價(jià) | ||
友臺(tái)UMW |
25+ |
DIP |
3000 |
國(guó)產(chǎn)替換現(xiàn)貨降本 |
詢價(jià) | ||
DISCRETE |
3000 |
PH3 |
459000 |
詢價(jià) | |||
恩XP |
2016+ |
SOT566 |
3500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
恩XP |
25+ |
SOT-416 |
117800 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) |
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