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          首頁 >VB20150SG-E3>規(guī)格書列表

          型號(hào)下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VB20150SG-E3

          High efficiency operation

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO

          文件:157.86 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:217.05 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          Trench MOS Schottky technology\nLow forward voltage drop, low power losses\nHigh efficiency operation;

          Vishay

          威世

          VB20150SG-E3/4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3/8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3SLASH4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3SLASH8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3/4W

          High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:163.51 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3/8W

          High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:163.51 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3SLASH4W

          High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:163.51 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細(xì)參數(shù)

          • 型號(hào):

            VB20150SG-E3

          • 功能描述:

            肖特基二極管與整流器 20 Amp 150 Volt Single TrenchMOS

          • RoHS:

          • 制造商:

            Skyworks Solutions, Inc.

          • 產(chǎn)品:

            Schottky Diodes

          • 峰值反向電壓:

            2 V

          • 正向連續(xù)電流:

            50 mA

          • 配置:

            Crossover Quad

          • 正向電壓下降:

            370 mV

          • 最大功率耗散:

            75 mW

          • 工作溫度范圍:

            - 65 C to + 150 C

          • 安裝風(fēng)格:

            SMD/SMT

          • 封裝/箱體:

            SOT-143

          • 封裝:

            Reel

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
          VIS
          22+
          TO-263AB
          6000
          十年配單,只做原裝
          詢價(jià)
          VISHAY/威世
          22+
          TO-263
          100000
          代理渠道/只做原裝/可含稅
          詢價(jià)
          VIS
          25+
          TO-263AB
          12300
          獨(dú)立分銷商 公司只做原裝 誠心經(jīng)營 免費(fèi)試樣正品保證
          詢價(jià)
          VISHAY
          25+
          TO-263
          3675
          就找我吧!--邀您體驗(yàn)愉快問購元件!
          詢價(jià)
          GENERALSEMICONDUCTORVISHAY
          24+
          NA
          30000
          房間原裝現(xiàn)貨特價(jià)熱賣,有單詳談
          詢價(jià)
          GENERALSEMICONDUCTORVISHAY
          21+
          NA
          12820
          只做原裝,質(zhì)量保證
          詢價(jià)
          GENERALSEMICONDUCTORVISHAY
          23+
          NA
          800
          電子元器件供應(yīng)原裝現(xiàn)貨. 優(yōu)質(zhì)獨(dú)立分銷。原廠核心渠道
          詢價(jià)
          GENERALSEMICONDUCTORVISHAY
          23+
          NA
          11200
          原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO
          詢價(jià)
          GENERALSEMICONDUCTORVISHAY
          22+
          N/A
          16000
          現(xiàn)貨,原廠原裝假一罰十!
          詢價(jià)
          GENERALSEMICONDUCTORVISHAY
          2450+
          NA
          9850
          只做原廠原裝正品現(xiàn)貨或訂貨假一賠十!
          詢價(jià)
          更多VB20150SG-E3供應(yīng)商 更新時(shí)間2026-1-18 14:02:00
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