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          首頁 >VB20150SG>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VB20150SG

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG

          High Voltage Trench MOS Barrier Schottky Rectifier

          文件:158.99 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG

          High Voltage Trench MOS Barrier Schottky Rectifier

          文件:149.4 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB,

          文件:217.05 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3

          High efficiency operation

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO

          文件:157.86 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3/4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3/8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3SLASH4W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3SLASH8W

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          Ultra Low VF = 0.57 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and

          文件:167.43 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20150SG-E3/4W

          High-Voltage Trench MOS Barrier Schottky Rectifier

          文件:163.51 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          詳細參數(shù)

          • 型號:

            VB20150SG

          • 制造商:

            VISHAY

          • 制造商全稱:

            Vishay Siliconix

          • 功能描述:

            High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 5 A

          供應商型號品牌批號封裝庫存備注價格
          達高TECCOR
          23+
          TO-220
          69820
          終端可以免費供樣,支持BOM配單!
          詢價
          VISHAY/威世
          22+
          TO-263
          6000
          十年配單,只做原裝
          詢價
          VISHAY
          25+
          TO-263
          12300
          獨立分銷商 公司只做原裝 誠心經(jīng)營 免費試樣正品保證
          詢價
          VISHAY
          24+
          TO-263
          5000
          全新原裝正品,現(xiàn)貨銷售
          詢價
          VISHAY
          24+
          TO-263
          12000
          原裝正品 假一罰十 可拆樣
          詢價
          VISHAY
          24+
          TO-263
          8000
          新到現(xiàn)貨,只做全新原裝正品
          詢價
          VISHAY
          原廠封裝
          9800
          原裝進口公司現(xiàn)貨假一賠百
          詢價
          VISHAY
          26+
          TO-263
          12000
          原裝,正品
          詢價
          VISHAY
          25+
          TO-263
          3675
          就找我吧!--邀您體驗愉快問購元件!
          詢價
          GENERALSEMICONDUCTORVISHAY
          24+
          NA
          30000
          房間原裝現(xiàn)貨特價熱賣,有單詳談
          詢價
          更多VB20150SG供應商 更新時間2026-1-17 14:08:00
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