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          首頁 >VB2>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          VB20120C-E3

          Schotty Barrier Diode

          FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

          文件:315.36 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          VB20120C-E3/4W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Component in acco

          文件:167.06 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120C-E3/8W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Component in acco

          文件:167.06 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120C-E3SLASH4W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Component in acco

          文件:167.06 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120C-E3SLASH8W

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) ? Component in acco

          文件:167.06 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120C-M3

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

          文件:103.12 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120C-M3

          Schotty Barrier Diode

          FEATURES · Low Forward Voltage Drop, Low Power losses · High Efficiency Operation · SMD APPLICATIONS · Switching Power Supply (SPS) · High Frequency Converter · DC/DC Converter

          文件:315.36 Kbytes 頁數(shù):2 Pages

          ISC

          無錫固電

          VB20120C-M3_V01

          Dual High-Voltage Trench MOS Barrier Schottky Rectifier

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C ? Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIO

          文件:103.12 Kbytes 頁數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S

          High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A

          FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Solder bath temperature 275 °C max. 10 s, per ?? JESD 22-B106 ? AEC-Q101 qualified ? Compliant to RoHS Directive 2002/95/EC and in ?? accordance to WEEE 2002/96/EC ? Haloge

          文件:166.29 Kbytes 頁數(shù):5 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          VB20120S-E3

          High Voltage Trench MOS Barrier Schottky Rectifier

          Ultra Low VF = 0.50 V at IF = 5 A FEATURES ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) ? Solder bath temperature 275 °C maximum, 10 s, per JESD 2

          文件:161.02 Kbytes 頁數(shù):6 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術(shù)參數(shù)

          • 端口數(shù)量:

            1

          • 頻率-最大值:

            4GHz

          • 射頻系列:

            BNC

          • 阻抗:

            50Ω

          供應(yīng)商型號品牌批號封裝庫存備注價格
          Vishay/GeneralSemiconduc
          24+
          TO-263
          1600
          詢價
          VISHAY
          12+
          TO-263
          15000
          全新原裝,絕對正品,公司現(xiàn)貨供應(yīng)。
          詢價
          FT/富士通
          2016+
          DIP
          6000
          只做原裝,假一罰十,專營繼電器!
          詢價
          Bridge
          16+
          QFP
          890
          進口原裝現(xiàn)貨/價格優(yōu)勢!
          詢價
          VISHAY
          17+
          TO-263
          6200
          100%原裝正品現(xiàn)貨
          詢價
          SIP
          1000
          原裝長期供貨!
          詢價
          TI
          25+
          SOP
          4500
          百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
          詢價
          Block
          24+
          NA
          2131
          進口原裝正品優(yōu)勢供應(yīng)
          詢價
          TI
          25+
          TSOP20
          3629
          原裝優(yōu)勢!房間現(xiàn)貨!歡迎來電!
          詢價
          TURCK
          2
          全新原裝 貨期兩周
          詢價
          更多VB2供應(yīng)商 更新時間2026-1-18 16:00:00
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