isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：319.24 Kbytes 頁數(shù)：2 Pages

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N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout re finements introduced greatly improve the Ron* area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate harge and ruggedness. ■ TYPICAL RD

文件：334.56 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

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N-CHANNEL 600V - 7ohm - 1.9A - TO-220/TO-220FP PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout re finements introduced greatly improve the Ron* area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate harge and ruggedness. ■ TYPICAL RD

文件：334.56 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

N-CHANNEL 600V - 3.3ohm - 2A DPAK / IPAK PowerMesh??I MOSFET

DESCRIPTION The PowerMESH?II is the evolution of the first generation of MESH OVERLAY?. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 3.

文件：283.31 Kbytes 頁數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 1.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.31 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電