Automotive-grade 650 V, 200 A trench gate field-stop M series low-loss IGBT die in D8 packing

Features ? AEC-Q101 qualified ? Low-loss series IGBT ? Low VCE(sat) = 1.55 V (typ.) at IC = 200 A ? Positive VCE(sat) temperature coefficient ? Tight parameter distribution ? Maximum junction temperature: TJ = 175 °C ? 6 μs minimum short-circuit withstanding time at TJ = 150 C Descriptio

文件：292.01 Kbytes 頁(yè)數(shù)：11 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：651.77 Kbytes 頁(yè)數(shù)：7 Pages

SAMHOP

三合微科

Q-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentation

文件：380.22 Kbytes 頁(yè)數(shù)：4 Pages

ERAVANT

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：123.18 Kbytes 頁(yè)數(shù)：7 Pages

SAMHOP

三合微科

Dual P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package.

文件：649.18 Kbytes 頁(yè)數(shù)：7 Pages

SAMHOP

三合微科

Ka-Band Noise Figure and Gain Test Extenders

FEATURES Full Band Coverage Precision Calibrated ENR Great ENR and Gain Flatness APPLICATIONS Test Lab Instrumentations

文件：378.85 Kbytes 頁(yè)數(shù)：4 Pages

ERAVANT

Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

Description The STG3155 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications.

文件：383.22 Kbytes 頁(yè)數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Low voltage 0.5廓 Max single SPDT switch with break-before-make feature

Description The STG3155 is a high-speed CMOS low voltage single analog S.P.D.T. (Single Pole Dual Throw) switch or 2:1 Multiplexer /Demultiplexer switch fabricated in silicon gate C2MOS technology. It is designed to operate from 1.65V to 4.3V, making this device ideal for portable applications.

文件：383.22 Kbytes 頁(yè)數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Description The STG3157 is a high-speed CMOS analog SPDT (single-pole double-throw) switch or 2:1 multiplexer/demultiplexer bus switch manufactured using silicon gate CMOS technology. It is designed to operate from a 1.65 V to 5.5 V supply, making the device ideal for portable applications. Feat

文件：245.56 Kbytes 頁(yè)數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

LOW VOLTAGE LOW ON RESISTANCE SPDT SWITCH WITH BREAK BEFORE MAKE FEATURE

Description The STG3157 is a high-speed CMOS analog SPDT (single-pole double-throw) switch or 2:1 multiplexer/demultiplexer bus switch manufactured using silicon gate CMOS technology. It is designed to operate from a 1.65 V to 5.5 V supply, making the device ideal for portable applications. Feat

文件：245.56 Kbytes 頁(yè)數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體