isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

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N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET

文件：491.49 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

文件：324.12 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

N-channel 500V - 0.47廓 - 7.5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh??Power MOSFET

文件：491.49 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

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N溝道500 V、0.73 Ohm、5 A MDmesh(TM) II功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d ? AEC-Q101 qualified \n? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

ST

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