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首頁(yè) >STD9N60M2>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
STD9N60M2	文件：299.24 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.78Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：299.24 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
STD9N60M2	文件：1.47888 Mbytes Page：21 Pages	Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：1.47888 Mbytes 頁(yè)數(shù)：21 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
STD9N60M2	文件：300 bytes Page：1 Pages	N溝道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET，DPAK封裝 These devices are N-channel Power MOSFETs developed using the MDmesh? M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high-efficiency converter ? Extremely low gate charge \n? Excellent output capacitance (COSS) profile \n? 100% avalanche tested \n? Zener-protected;	ST 意法半導(dǎo)體	ST
STF9N60M2	文件：884.75 Kbytes Page：15 Pages	N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：884.75 Kbytes 頁(yè)數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS
STF9N60M2	文件：319.13 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.78Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件：319.13 Kbytes 頁(yè)數(shù)：2 Pages	ISC 無(wú)錫固電	ISC
STFI9N60M2	文件：884.75 Kbytes Page：15 Pages	N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh? technology: MDmesh II Plus? low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They 文件：884.75 Kbytes 頁(yè)數(shù)：15 Pages	STMICROELECTRONICS 意法半導(dǎo)體	STMICROELECTRONICS

技術(shù)參數(shù)

Package：
DPAK
Grade：
Industrial
VDSS(V)：
600
RDS(on)_max(@ VGS=10V)(Ω)：
0.78
Drain Current (Dc)_max(A)：
5.5
PTOT_max(W)：
60
Qg_typ(nC)：
7.5

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市昂芯微科技有限公司	STD9N60M2	ST	23+	TO252	6996	只做原裝正品現(xiàn)貨	詢價(jià)
深圳市華高宇電子有限公司	STD9N60M2	STM	20+		50000	TO-252-3 (DPAK)	詢價(jià)
深圳和潤(rùn)天下電子科技有限公司	STD9N60M2	ST/意法半導(dǎo)體	22+	TO-252-3	6005	原裝正品現(xiàn)貨可開(kāi)增值稅發(fā)票	詢價(jià)
深圳市高捷芯城科技有限公司	STD9N60M2	STMICRO	25+	N/A	7786	正規(guī)渠道,免費(fèi)送樣。支持賬期,BOM一站式配齊	詢價(jià)
深圳市達(dá)恩科技有限公司	STD9N60M2	STMicroelectronics	24+	NA	3000	進(jìn)口原裝正品優(yōu)勢(shì)供應(yīng)	詢價(jià)
深圳市納立科技有限公司	STD9N60M2		三年內(nèi)		1983	只做原裝正品	詢價(jià)
深圳市斌騰達(dá)科技有限公司	STD9N60M2	STMicroelectronics	21+	DPAK	2500	100%進(jìn)口原裝!長(zhǎng)期供應(yīng)!絕對(duì)優(yōu)勢(shì)價(jià)格(誠(chéng)信經(jīng)營(yíng))!	詢價(jià)
深圳市百諾芯科技有限公司	STD9N60M2	ST/意法	23+	NA	12730	原裝正品代理渠道價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市科雨電子有限公司	STD9N60M2	STM	25+	TO-252	3675	就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!	詢價(jià)
深圳市金芯陽(yáng)科技有限公司	STD9N60M2	ST	24+	原廠正品	9240	原裝現(xiàn)貨假一賠百	詢價(jià)

更多STD9N60M2供應(yīng)商更新時(shí)間2026-1-18 14:23:00

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