Automotive?grade N?channel 950 V, 0.95 Ω typ., 9 A MDmesh K5 Power MOSFET in a DPAK package

Features ? AEC-Q101 qualified ? Industry’s lowest RDS(on) x area ? Industry’s best FoM (figure of merit) ? Ultra-low gate charge ? 100 avalanche tested ? Zener-protected Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovati

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STMICROELECTRONICS

意法半導(dǎo)體

Automotive-grade N-channel 950 V, 0.95 Ohm typ., 9 A MDmesh K5 Power MOSFET in a DPAK package

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. ? AEC-Q101 qualified \n? Industry’s lowest RDS(on) x area \n? Industry’s best FoM (figure of merit) \n? Ultra-low gate charge \n? 100% avalanche tested \n? Zener-protected;

ST

意法半導(dǎo)體

TO-252

STMICROELECTRONICS

意法半導(dǎo)體

上傳：深圳市壹芯創(chuàng)科技有限公司

TO252

ST

上傳：深圳市金芯陽(yáng)科技有限公司

NDK

金屬工業(yè)

上傳：天津市博通航睿技術(shù)有限公司