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          首頁(yè) >STD7NM60N>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          STD7NM60N

          N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

          Description These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product offers improved on-resistance, l

          文件:885.94 Kbytes 頁(yè)數(shù):17 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STD7NM60N

          絲?。?a target="_blank" title="Marking" href="/dpak/marking.html">DPAK;Package:TO-252;isc N-Channel MOSFET Transistor

          文件:324.89 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          STD7NM60N

          N溝道600 V、0.8 Ohm典型值、5 A MDmesh II功率MOSFET,DPAK封裝

          This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

          ST

          意法半導(dǎo)體

          STF7NM60N

          N-channel 600 V, 5 A, 0.84 ohm, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET

          Description These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTM technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product offers improved on-resistance, l

          文件:885.94 Kbytes 頁(yè)數(shù):17 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          STF7NM60N

          isc N-Channel MOSFET Transistor

          文件:310.75 Kbytes 頁(yè)數(shù):2 Pages

          ISC

          無(wú)錫固電

          STL7NM60N

          Low input capacitance and gate charge, Low gate input resistance

          文件:786.66 Kbytes 頁(yè)數(shù):13 Pages

          STMICROELECTRONICS

          意法半導(dǎo)體

          技術(shù)參數(shù)

          • Package:

            DPAK

          • Grade:

            Industrial

          • VDSS(V):

            600

          • RDS(on)_max(@ VGS=10V)(Ω):

            0.9

          • Drain Current (Dc)_max(A):

            5

          • PTOT_max(W):

            45

          • Qg_typ(nC):

            14

          供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
          ST/意法
          25+
          TO252
          32360
          ST/意法全新特價(jià)STD7NM60N即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
          詢價(jià)
          ST
          25+
          TO252
          18600
          百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
          詢價(jià)
          ST
          24+
          17+
          217
          TO-252-3
          詢價(jià)
          ST
          23+
          TO252
          6996
          只做原裝正品現(xiàn)貨
          詢價(jià)
          STM
          21+
          5000
          TO-252-3 (DPAK)
          詢價(jià)
          ST/意法半導(dǎo)體
          22+
          TO-252-3
          6006
          原裝正品現(xiàn)貨 可開(kāi)增值稅發(fā)票
          詢價(jià)
          ST/意法
          2021+
          TO-252-3
          9000
          原裝現(xiàn)貨,隨時(shí)歡迎詢價(jià)
          詢價(jià)
          ST
          2024+
          N/A
          70000
          柒號(hào)只做原裝 現(xiàn)貨價(jià)秒殺全網(wǎng)
          詢價(jià)
          ST
          2430+
          TO252-3
          8540
          只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!
          詢價(jià)
          ST
          22+
          30000
          原裝現(xiàn)貨,可追溯原廠渠道
          詢價(jià)
          更多STD7NM60N供應(yīng)商 更新時(shí)間2026-1-19 9:04:00
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