100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

文件：616.78 Kbytes 頁(yè)數(shù)：5 Pages

UMW

友臺(tái)半導(dǎo)體

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

文件：583.94 Kbytes 頁(yè)數(shù)：5 Pages

EVVOSEMI

翊歐

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

文件：583.94 Kbytes 頁(yè)數(shù)：5 Pages

EVVOSEMI

翊歐

100V N-Channel Power MOSFET

General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD

文件：616.78 Kbytes 頁(yè)數(shù)：5 Pages

UMW

友臺(tái)半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/d10nf10/marking.html">D10NF10；Package：TO-252-3L；N-Channel 100-V (D-S) MOSFET

Features @ Ros = 100m @VGS=10V ? Super high density cell design for extremely low RDS(ON) ? Exceptional on-resistance and maximum DC current

文件：2.69134 Mbytes 頁(yè)數(shù)：5 Pages

TECHPUBLIC

臺(tái)舟電子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) -RDS(on) = 0.63Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：299.22 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-channel 500 V, 0.53 廓, 7 A DPAK, TO-220FP, TO-220 MDmesh??II Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：1.1377 Mbytes 頁(yè)數(shù)：18 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Isc N-Channel MOSFET Transistor

? FEATURES ? With To-252(DPAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ??????? ? APPLICATIONS ? Switching applications

文件：320.74 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

絲?。?a target="_blank" title="Marking" href="/10nm60n/marking.html">10NM60N；Package：DPAK；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh? technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product offers improved on-resistanc

文件：907.61 Kbytes 頁(yè)數(shù)：17 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/10nm60nd/marking.html">10NM60ND；Package：DPAK；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description This FDmesh? II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is

文件：1.2278 Mbytes 頁(yè)數(shù)：19 Pages

STMICROELECTRONICS

意法半導(dǎo)體