Isc N-Channel MOSFET Transistor

? FEATURES ? With To-252(DPAK) package ? Low input capacitance and gate charge ? Low gate input resistance ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation ??????? ? APPLICATIONS ? Switching applications

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ISC

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絲?。?a target="_blank" title="Marking" href="/10nm60n/marking.html">10NM60N；Package：DPAK；N-channel 600 V, 0.53 ohm, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh II Power MOSFET

Description These devices are N-channel 600 V Power MOSFET realized using the second generation of MDmesh? technology. It applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH? horizontal layout structure. The resulting product offers improved on-resistanc

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STMICROELECTRONICS

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絲?。?a target="_blank" title="Marking" href="/10nm60nd/marking.html">10NM60ND；Package：DPAK；N-channel 600 V, 0.57, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode)

Description This FDmesh? II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh? technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low onresistance and superior switching performance. It is

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STMICROELECTRONICS

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N溝道600 V、0.53 Ohm典型值、10 A MDmesh II功率MOSFET，DPAK封裝

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d ? 100% avalanche tested \n? Low input capacitance and gate charge \n? Low gate input resistance;

ST

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N-channel 600 V, 570 mOhm typ., 8 A, FDmesh II Power MOSFET in a DPAK package

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. ? Fast-recovery body diode \n? Low gate charge and input capacitance \n? Low on-resistance RDS(on) \n? 100% avalanche tested \n? High dv/dt ruggedness;

ST

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