絲?。?a target="_blank" title="Marking" href="/100n10f7/marking.html">100N10F7；Package：DPAK；N-channel 100 V, 6.8 mΩ typ., 80 A STripFET? F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages

Features ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description These N-channel Power MOSFETs utilize STripFET? F7 technology with an enhanced trenc

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絲?。?a target="_blank" title="Marking" href="/100n10lf7/marking.html">100N10LF7；Package：DPAK；Automotive-grade N-channel 100 V, 5 mΩ typ., 80 A STripFET? F7 Power MOSFET in a DPAK package

Feature ? Designed for automotive applications and AEC-Q101 qualified ? Among the lowest RDS(on) on the market ? Excellent FoM (figure of merit) ? Low Crss/Ciss ratio for EMI immunity ? High avalanche ruggedness Applications ? Switching applications Description This N-channel P

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N-channel 30V - 0.0045OHM - 80A - DPAK - IPAK Planar STripFET TM II Power MOSFET

Description This Power MOSFET is the latest refinement of STMicroelectronics unique “Single Feature Size?” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics, low gate charge and less critical alignment steps

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N-channel 24V - 0.0042ohm - 60A - DPAK - IPAK STripFET TM II Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses redu

文件：475.07 Kbytes 頁數(shù)：16 Pages

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N-channel 24V - 0.0042 - 60A - DPAK - IPAK STripFET II Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses redu

文件：474.04 Kbytes 頁數(shù)：12 Pages

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N-channel 24V - 0.0042ohm - 60A - DPAK - IPAK STripFET TM II Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses redu

文件：475.07 Kbytes 頁數(shù)：16 Pages

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N-channel 24V - 0.0042ohm - 60A - DPAK - IPAK STripFET TM II Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses redu

文件：475.07 Kbytes 頁數(shù)：16 Pages

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N-channel 24V - 0.0042 - 60A - DPAK - IPAK STripFET II Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses redu

文件：474.04 Kbytes 頁數(shù)：12 Pages

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N-channel 24V - 0.0042 - 60A - DPAK - IPAK STripFET II Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses redu

文件：474.04 Kbytes 頁數(shù)：12 Pages

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N-channel 24V - 0.0042ohm - 60A - DPAK - IPAK STripFET TM II Power MOSFET

Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET? technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. General features ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses redu

文件：475.07 Kbytes 頁數(shù)：16 Pages

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