| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
STD10NF10 | 100V N-Channel Power MOSFET General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD 文件:616.78 Kbytes 頁數(shù):5 Pages | UMW 友臺半導體 | UMW | |
STD10NF10 | 100V N-Channel Power MOSFET General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD 文件:583.94 Kbytes 頁數(shù):5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | |
STD10NF10 | N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET 文件:458.84 Kbytes 頁數(shù):14 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | |
STD10NF10 | N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET? II POWER MOSFET | ST 意法半導體 | ST | |
100V N-Channel Power MOSFET General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD 文件:616.78 Kbytes 頁數(shù):5 Pages | UMW 友臺半導體 | UMW | ||
100V N-Channel Power MOSFET General Description The STD10NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features VDS = 100V,ID =15A RDS(ON),95 mΩ(Typ) @ VGS =10V RD 文件:583.94 Kbytes 頁數(shù):5 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
絲?。?a target="_blank" title="Marking" href="/d10nf10/marking.html">D10NF10;Package:TO-252-3L;N-Channel 100-V (D-S) MOSFET Features @ Ros = 100m @VGS=10V ? Super high density cell design for extremely low RDS(ON) ? Exceptional on-resistance and maximum DC current 文件:2.69134 Mbytes 頁數(shù):5 Pages | TECHPUBLIC 臺舟電子 | TECHPUBLIC | ||
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET 文件:458.84 Kbytes 頁數(shù):14 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
N-CHANNEL 100V - 0.115 ohm - 13A IPAK/DPAK LOW GATE CHARGE STripFET??II POWER MOSFET 文件:458.84 Kbytes 頁數(shù):14 Pages | STMICROELECTRONICS 意法半導體 | STMICROELECTRONICS | ||
N-Channel 100 V (D-S) MOSFET 文件:1.00872 Mbytes 頁數(shù):7 Pages | VBSEMI 微碧半導體 | VBSEMI |
技術(shù)參數(shù)
- Package:
DPAK
- Grade:
Industrial
- VDSS(V):
100
- RDS(on)_max(@ VGS=10V)(Ω):
0.13
- Drain Current (Dc)_max(A):
13
- PTOT_max(W):
50
- Qg_typ(nC):
15.3
| 供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TO-252 |
45000 |
ST/意法全新現(xiàn)貨STD10NF10即刻詢購立享優(yōu)惠#長期有排單訂 |
詢價 | ||
ST |
24+ |
TO252DPAK |
8866 |
詢價 | |||
STMicroelectronics |
24+ |
NA |
3000 |
進口原裝正品優(yōu)勢供應 |
詢價 | ||
ST |
25+ |
TO-252 |
90000 |
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST |
2447 |
TO-252 |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
詢價 | ||
ST(意法) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務做口碑有支持 |
詢價 | ||
ST/意法 |
23+ |
TO-252 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
ST/意法 |
2022+ |
TO-252 |
32500 |
原廠代理 終端免費提供樣品 |
詢價 | ||
ST |
25+ |
TO-252 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售! |
詢價 |
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