N-channel 650 V - 0.43 廓 - 9 A - TO-220 - TO-220FP- IPAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh? Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

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P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -10A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.18Ω(Max)@VGS= -10V · Fast-recovery body diode APPLICATIONS · Bridge circuits · Power Stitching

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絲?。?a target="_blank" title="Marking" href="/10p10f6/marking.html">10P10F6；Package：DPAK；P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The

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P-channel -100 V, 0.36 Ω typ., -10 A STripFET F6 Power MOSFET in a DPAK package

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The

文件：403.87 Kbytes 頁數(shù)：16 Pages

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P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications

文件：1.20301 Mbytes 頁數(shù)：24 Pages

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P-channel 60 V, 0.15 廓 typ., 10 A STripFET??VI DeepGATE??Power MOSFET in DPAK and TO-220 packages

Description These devices are P-channel Power MOSFETs developed using the STripFET? F6 technology, with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages. Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Lo

文件：490.86 Kbytes 頁數(shù)：15 Pages

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絲?。?a target="_blank" title="Marking" href="/10p6f6/marking.html">10P6F6；Package：DPAK；P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications Description These devices are P-channel Power MOSFETs developed using the STripFET? F6 technology, with a new trench gate structure.

文件：1.20288 Mbytes 頁數(shù)：24 Pages

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P-channel -60 V, 0.13 Ω typ., -10 A STripFET? F6 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Features ? Very low on-resistance ? Very low gate charge ? High avalanche ruggedness ? Low gate drive power loss Applications ? Switching applications

文件：1.20301 Mbytes 頁數(shù)：24 Pages

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P-CHANNEL 60V - 0.18 Ohm - 10A IPAK/DPAK STripFET II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

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P - CHANNEL 60V - 0.18 ohm - 10A TO-252 STripFET POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size? strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

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