| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
Cool MOS Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance 文件：267.56 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
SIPMO Power Transistor SIPMOS? Power Transistor ? N-Channel ? Enhancement mode ? Avalanche rated 文件：86.47 Kbytes 頁數(shù)：9 Pages | SIEMENS 西門子 | SIEMENS | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08852 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-Channel MOSFET Transistor ? DESCRITION ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：336.01 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
Cool MOS Power Transistor Cool MOS? Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances 文件：294.92 Kbytes 頁數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for target app 文件：251.9 Kbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel MOSFET Transistor ? DESCRITION ? Ultra low effective capacitance ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：335.18 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
N-Channel MOSFET Transistor ? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤2.7? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：336.49 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC | ||
CoolMOS Power Transistor Features ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for target applications 文件：433.48 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Pb-free lead plating; RoHS compliant; available Halogen free mold compound a) ? Qualified according 文件：262.3 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- VDS?max：
600.0V
- RDS (on)?max：
6000.0m?
- Polarity?：
N
- ID ?max：
0.8A
- Ptot?max：
11.0W
- IDpuls?max：
1.6A
- VGS(th)?min?max：
2.1V?3.9V
- QG?：
3.9nC?
- Rth?：
11.0K/W?
- RthJC?max：
11.0K/W
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
DIODES/美臺 |
23+ |
TO-220 |
69820 |
終端可以免費供樣,支持BOM配單! |
詢價 | ||
INFINEON/英飛凌 |
24+ |
TO252 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
QFP |
10 |
詢價 | |||||
INFINEON |
24+ |
con |
10000 |
查現(xiàn)貨到京北通宇商城 |
詢價 | ||
RFMD |
23+ |
SOF-26 |
5800 |
絕對全新原裝!優(yōu)勢供貨渠道!特價!請放心訂購! |
詢價 | ||
ON |
24+ |
原廠封裝 |
7000 |
原裝現(xiàn)貨假一罰十 |
詢價 | ||
NUVOTON/新唐 |
20+ |
SMD |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價 | ||
Intel |
2138+ |
QFP |
8960 |
專營BGA,QFP原裝現(xiàn)貨,假一賠十 |
詢價 | ||
INFINEON |
24+ |
n/a |
25836 |
新到現(xiàn)貨,只做原裝進口 |
詢價 | ||
INFINEON |
10+ |
P-TO252- |
7800 |
全新原裝正品,現(xiàn)貨銷售 |
詢價 |
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