Cool MOS Power Transistor

Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance

文件：267.56 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

N-Channel MOSFET Transistor

? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Power MOSFET

FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC

文件：1.07867 Mbytes 頁數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體

Cool MOS Power Transistor

文件：635.61 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

500 V-950 V CoolMOS? N 溝道功率 MOSFET

Replacement for 500V CoolMOS? C3 is CoolMOS? P7. \n 500V CoolMOS? C3 is Infineon's third series of CoolMOS? with market entry in 2001. C3 is the \"working horse\" of the portfolio. ? Low specific on-state resistance (RDS(on)*A)\n? Very low energy storage in output capacitance (Eoss) @400V\n? Low gate charge (Qg)\n? Fieldproven CoolMOS? quality\n? CoolMOS? technology has been manufactured by Infineon since 1998\n\n優(yōu)勢:\n? High efficiency and power density\n? Outstanding cost/per;

Infineon

英飛凌

Cool MOS Power Transistor

文件：635.61 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌