| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SPD | C to Ku Band Mixer, Detector, Modulator Applications Features ? Very small-sized ceramic package ? Less parasitic components, conversion loss ? Many types : 5 single types, 10 integrated types 文件：57.78 Kbytes 頁數(shù)：2 Pages | SANYO 三洋 | SANYO | |
SPD | Over Voltage & Under Voltage Cut-Off With Surge Protection Device OVCD Features ? Extends The Life Of Your Fixture By Eliminating Temporary Over/Under Voltages that Can Harm Sensitive Electronic Components ? Over 6,000 Operations Per Product Lifetime ? Safe Restore? -30 Second Delay on Power-Up -Instant Drop on Over/Under Voltage Condition -30 Second Del 文件：234.05 Kbytes 頁數(shù)：1 Pages | ABLEPOWERPRODUCTS | ABLEPOWERPRODUCTS | |
SPD | 20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER Features: ? Fast Recovery: 120 nsec maximum ? Low Reverse Leakage Current ? Single Chip Construction ? PIV to 400V ? Hermetically Sealed ? High Surge Rating ? Low Thermal Resistance ? Higher Voltage Devices Available–Contact Factory ? For Reverse Polarity Add Suffix “R” ? Replacement for 文件：75.77 Kbytes 頁數(shù)：2 Pages | SSDI | SSDI | |
SPD | Compact, High-Performance String Pot Dual Ouput to 50 文件：939.34 Kbytes 頁數(shù)：4 Pages | TEC 泰科電子 | TEC | |
絲?。?strong>SPD；Package：SOT-23F；MOSFETs Silicon P-Channel MOS 文件：379.29 Kbytes 頁數(shù)：9 Pages | TOSHIBA 東芝 | TOSHIBA | ||
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for target applications 文件：910.3 Kbytes 頁數(shù)：11 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for target applications 文件：279.9 Kbytes 頁數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08866 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
Power MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.07867 Mbytes 頁數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-Channel MOSFET Transistor ? DESCRITION ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：335.21 Kbytes 頁數(shù)：2 Pages | ISC 無錫固電 | ISC |
技術(shù)參數(shù)
- VDS?max：
600.0V
- RDS (on)?max：
6000.0m?
- Polarity?：
N
- ID ?max：
0.8A
- Ptot?max：
11.0W
- IDpuls?max：
1.6A
- VGS(th)?min?max：
2.1V?3.9V
- QG?：
3.9nC?
- Rth?：
11.0K/W?
- RthJC?max：
11.0K/W
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
DIODES/美臺 |
23+ |
TO-220 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
INFINEON |
21+ |
TO-252 |
3000 |
只做原裝,絕對現(xiàn)貨,原廠代理商渠道,歡迎電話微信查 |
詢價(jià) | ||
INFINEON |
23+ |
TO-220 |
20000 |
原裝正品,假一罰十 |
詢價(jià) | ||
Infineon/英飛凌 |
18+ |
TO252 |
12500 |
全新原裝正品,本司專業(yè)配單,大單小單都配 |
詢價(jià) | ||
KODENSHI |
13+ |
11352 |
原裝分銷 |
詢價(jià) | |||
INFINEON |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價(jià) | ||
Infineontechnologies |
24+ |
原裝正品 |
5850 |
原裝現(xiàn)貨 假一賠百 |
詢價(jià) | ||
INFINEON |
24+ |
SOT252 |
99494 |
詢價(jià) | |||
Infineon |
24+ |
TO-252 |
20000 |
全新原廠原裝，進(jìn)口正品現(xiàn)貨，正規(guī)渠道可含稅！！ |
詢價(jià) | ||
INTEL |
25+ |
PQFP |
1200 |
原裝現(xiàn)貨熱賣中,提供一站式真芯服務(wù) |
詢價(jià) |
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