| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SPD02N60 | SIPMO Power Transistor SIPMOS? Power Transistor ? N-Channel ? Enhancement mode ? Avalanche rated 文件：86.47 Kbytes 頁(yè)數(shù)：9 Pages | SIEMENS 西門(mén)子 | SIEMENS | |
SPD02N60 | SIPMO Power Transistor | Infineon 英飛凌 | Infineon | |
N-Channel 650 V (D-S) MOSFET FEATURES ? Low Gate Charge Qg Results in Simple Drive Requirement ? Improved Gate, Avalanche and Dynamic dV/dt Ruggedness ? Fully Characterized Capacitance and Avalanche Voltage and Current ? Compliant to RoHS directive 2002/95/EC 文件：1.08852 Mbytes 頁(yè)數(shù)：9 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
N-Channel MOSFET Transistor ? DESCRITION ? Ultra low effective capacitance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：336.01 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
Cool MOS Power Transistor Cool MOS? Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances 文件：294.92 Kbytes 頁(yè)數(shù)：12 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS??Power Transistor Feature ? New revolutionary high voltage technology ? Ultra low gate charge ? Periodic avalanche rated ? Extreme dv/dt rated ? Ultra low effective capacitances ? Improved transconductance ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC0) for target app 文件：251.9 Kbytes 頁(yè)數(shù)：10 Pages | INFINEON 英飛凌 | INFINEON | ||
N-Channel MOSFET Transistor ? DESCRITION ? Ultra low effective capacitance ? Improved transconductance ? FEATURES ? Static drain-source on-resistance: RDS(on)≤3? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation 文件：335.18 Kbytes 頁(yè)數(shù)：2 Pages | ISC 無(wú)錫固電 | ISC | ||
Cool MOS Power Transistor 文件：1.01922 Mbytes 頁(yè)數(shù)：13 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS Power Transistor 文件：1.22437 Mbytes 頁(yè)數(shù)：13 Pages | INFINEON 英飛凌 | INFINEON | ||
Cool MOS Power Transistor 文件：1.22437 Mbytes 頁(yè)數(shù)：13 Pages | INFINEON 英飛凌 | INFINEON |
技術(shù)參數(shù)
- Package?：
DPAK (TO-252)
- VDS?max：
600.0V
- RDS (on)?max：
2700.0m?
- Polarity?：
N
- ID ?max：
1.8A
- Ptot?max：
25.0W
- IDpuls?max：
5.4A
- VGS(th)?min?max：
2.1V?3.9V
- QG?：
9.5nC?
- Rth?：
5.0K/W?
- RthJC?max：
5.0K/W
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
infineon |
12+ |
TO-252(DPAK) |
15000 |
全新原裝,絕對(duì)正品,公司現(xiàn)貨供應(yīng)。 |
詢(xún)價(jià) | ||
INFINEON |
24+ |
TO-252 |
200000 |
詢(xún)價(jià) | |||
INFINE0N |
23+ |
TO-252 |
11846 |
一級(jí)代理商現(xiàn)貨批發(fā),原裝正品,假一罰十 |
詢(xún)價(jià) | ||
INFINEON |
25+ |
TO-252 |
90000 |
一級(jí)代理商進(jìn)口原裝現(xiàn)貨、假一罰十價(jià)格合理 |
詢(xún)價(jià) | ||
INFINEON |
20+ |
TO-252 |
36900 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢(xún)價(jià) | ||
MAGNACHIP/美格納 |
23+ |
SOP-8 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
23+ |
TO-252D-PAK |
24190 |
原裝正品代理渠道價(jià)格優(yōu)勢(shì) |
詢(xún)價(jià) | ||
INFINEON |
25+ |
5000 |
普通 |
詢(xún)價(jià) | |||
INFINEON/英飛凌 |
21+ |
TO-252D-PAK |
30000 |
優(yōu)勢(shì)供應(yīng) 實(shí)單必成 可13點(diǎn)增值稅 |
詢(xún)價(jià) | ||
INFINEON/英飛凌 |
2022+ |
P-TO252 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢(xún)價(jià) |
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